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NRVTSS5100ET3G

Onsemi

NRVTSS5100ET3G by Onsemi

NRVTSS5100ET3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.69V and output current of 5A. It operates b/w -55 to 175°C, has a peak reflow temperature of 260°C, and is ideal for efficiency applications in automotive electronics due to its AEC-Q101 standard compliance.

Median Price

$0.289

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 166,570 parts In-Stock

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-

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$0.300

1k+ parts

$0.249

10k+ parts

$0.222

166,570

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$0.300

$0.249

$0.222

Verical

USA . 166,570 parts In-Stock

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$0.278

166,570

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$0.278

Distributors (In-Stock)

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Maritex

Poland . 3,188 parts In-Stock

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$0.695

100+ parts

$0.405

1k+ parts

$0.375

10k+ parts

$0.335

3,188

$0.695

$0.405

$0.375

$0.335

Flip Electronics

USA . 410,000 parts In-Stock

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Bristol Electronics

USA . 100,000 parts In-Stock

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Chip Stock

USA . 25,564 parts In-Stock

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Vyrian

USA . 9,706 parts In-Stock

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Next Level Components, LLC

USA . 5,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 2,380 parts In-Stock

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Digiode

USA . 903 parts In-Stock

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LWI Electronics Inc

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Nova Conductors

Japan . 44 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 583 parts In-Stock

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$0.070

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583

$0.070

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Ampacity Inc.

Singapore . 349 parts In-Stock

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$1.010

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349

$1.010

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Semicontronic

India . 630 parts In-Stock

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$3.010

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$2.935

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$2.920

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630

$3.010

$2.935

$2.920

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AZTECH Wire

Italy . 91 parts In-Stock

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$11.500

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$11.500

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Infinite Electronics LLP (Excess)

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Kepictronics

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S.R.D Solutions

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Perfect Parts

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Lixinc

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 6,653 parts In-Stock

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SupplyDigital Components

Austria . 5,990 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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iodParts Technologies Inc.

India . 900 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Corohmni

South Africa . 459 parts In-Stock

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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Overview

Discover the NRVTSS5100ET3G by Onsemi, a high-quality Schottky rectifier diode that offers unparalleled efficiency and reliability. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 100V, this diode is designed for applications where performance is key. Manufactured by Onsemi, a trusted leader in the industry, you can trust that this product meets the highest standards of quality and durability. Whether you're working on power supplies, converters, or battery chargers, the NRVTSS5100ET3G is sure to provide value and benefits that will exceed your expectations. Elevate your projects with this cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, ensuring its longevity and reliability.

Config: SINGLE

Single configuration makes it easy to install and replace, simplifying the overall circuit design.

Surface Mount: YES

Surface mount capability allows for easy and secure attachment to circuit boards, saving space and improving efficiency.

Maximum Reverse Current: 9 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and easily mountable, making it suitable for a variety of applications.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board, allowing for compact designs.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power consumption needs to be minimized.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the diode can withstand heat and perform reliably in various conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in colder environments without impacting performance.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and corrosion resistance, ensuring stable connections.

Terminal Position: DUAL

Dual terminal position allows for multiple connection options, increasing flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature prevents overheating and damage during soldering.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures secure and reliable solder joints during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard indicates high reliability and quality, suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode allows current to flow in one direction, making it suitable for converting AC to DC in power supplies.

Maximum Forward Voltage (VF): 0.69 V

Low maximum forward voltage drop minimizes power loss and improves efficiency in rectification applications.

Maximum Output Current: 5 A

High maximum output current capacity allows the diode to handle demanding load conditions without overheating.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: C BEND

C bend terminal form provides a secure and reliable connection, ensuring stable performance in demanding environments.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage allows the diode to withstand high voltage spikes without breakdown.

Maximum Non Repetitive Peak Forward Current: 50 A

High maximum non-repetitive peak forward current capability ensures the diode can handle surge currents without damage.

Diode Element Material: SILICON

Silicon material in the diode element provides good thermal conductivity and reliability, ensuring long-term performance.

Technical Specifications

Diodes & Rectifiers NRVTSS5100ET3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.69 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

9 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTSS5100ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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