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MBR830MFST1G

Onsemi

MBR830MFST1G by Onsemi

MBR830MFST1G by Onsemi is a Schottky rectifier diode with 30V max reverse voltage and 8A max output current. It operates b/w -40 to 150 °C, ideal for efficiency applications. This single-configured diode has a matte tin finish, flat terminal form, and small outline package style.

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AZTECH Wire

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Overview

Discover the MBR830MFST1G by Onsemi, a top-quality product in the Diodes & Rectifiers category. Manufactured with precision and expertise by Onsemi, this diode offers unparalleled efficiency and reliability for a wide range of applications. With a maximum output current of 8A and a maximum forward voltage of 0.7V, this Schottky diode is designed to meet your needs with ease. Experience the benefits of this product's high performance and durability, making it the perfect choice for your electronic projects. Unlock new possibilities with the MBR830MFST1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and reduces complexity.

Surface Mount: YES

Surface mount capability enables easy installation and saves space on the PCB.

Maximum Reverse Current: 200 uA

Low maximum reverse current ensures energy efficiency and reliable operation.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and handling during assembly.

No. of Terminals: 5

Having 5 terminals allows for multiple connections and flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves PCB space and facilitates high-density circuit layouts.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where power saving is crucial.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various operating environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in harsh and cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides a good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in circuit connection options.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures proper polarity.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress on the diode during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder joints and proper bonding during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC current with low forward voltage drop.

Maximum Forward Voltage (VF): 0.7 V

Low maximum forward voltage drop ensures efficient power conversion with minimal energy loss.

Maximum Output Current: 8 A

High maximum output current capability makes it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop for efficient power conversion.

Terminal Form: FLAT

Flat terminal form allows for easy soldering and secure connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage ensures reliable operation under varying voltage conditions.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current capability allows for handling of surge currents without damage.

Diode Element Material: SILICON

Silicon diode element material provides reliable performance and long-term stability in various operating conditions.

Technical Specifications

Diodes & Rectifiers MBR830MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR830MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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