Loading...

MBR8170TFSTBG

Onsemi

MBR8170TFSTBG by Onsemi

MBR8170TFSTBG by Onsemi is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.89V. It operates b/w -55 to 175 °C, with a reverse test voltage of 170V. Ideal for applications requiring high efficiency and low power loss in compact electronic devices.

Median Price

$1.690

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,500 parts In-Stock

1+ parts

$1.690

100+ parts

$1.100

1k+ parts

$0.739

10k+ parts

$0.483

1,500

$1.690

$1.100

$0.739

$0.483

Flip Electronics (Authorized)

USA . 7,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,300

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,016 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

10k+ parts

-

2,016

$0.370

-

-

-

Flip Electronics

USA . 7,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,300

-

-

-

-

Digiode

USA . 87 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

87

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 84 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

10k+ parts

-

84

$0.370

-

-

-

Microchip USA

USA . 255 parts In-Stock

1+ parts

$3.445

100+ parts

-

1k+ parts

-

10k+ parts

-

255

$3.445

-

-

-

Kulean Microsystems

USA . 7,524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,524

-

-

-

-

SupplyDigital Components

Austria . 6,601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,601

-

-

-

-

Problanco Electronics

Mexico . 4,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,576

-

-

-

-

TANS Electronics

Latvia . 2,763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,763

-

-

-

-

Corphita

USA . 1,665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,665

-

-

-

-

UHIMA Technologies

Türkiye . 499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

499

-

-

-

-

Overview

Enhance your electronic projects with the MBR8170TFSTBG by Onsemi. Manufactured with top-quality materials, this SCHOTTKY rectifier diode offers reliable performance and efficiency. With a maximum output current of 8A and a reverse test voltage of 170V, this diode is perfect for various applications in the electronics industry. Whether you're working on power supplies, battery chargers, or voltage converters, this diode's small outline package and matte tin terminal finish make it easy to integrate into your designs. Trust Onsemi's expertise and choose the MBR8170TFSTBG for superior results in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides durability and protection for the diode, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying the assembly process.

Maximum Reverse Current: 30 uA

Low maximum reverse current ensures efficient operation and minimal power loss in reverse bias.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows for reliable performance in a variety of environments.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC, making it suitable for a wide range of electronic applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, making the diode ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBR8170TFSTBG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

170 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

170 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

170 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR8170TFSTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19