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MBR845RL

Onsemi

MBR845RL by Onsemi

MBR845RL by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 8A. It operates at a peak reverse voltage of 45V, making it ideal for high-efficiency applications. The diode's package style is long form with an isolated case connection, suitable for use in various electronic circuits.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.208

10k+ parts

$0.186

2

-

$0.251

$0.208

$0.186

Distributors (In-Stock)

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Digiode

USA . 939 parts In-Stock

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$0.196

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939

$0.196

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Vyrian

USA . 2,864 parts In-Stock

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Inventory MP

USA . 1,353 parts In-Stock

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Bristol Electronics

USA . 1,353 parts In-Stock

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Corphita

USA . 2,063 parts In-Stock

1+ parts

$0.185

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2,063

$0.185

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Corohmni

South Africa . 403 parts In-Stock

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$0.206

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403

$0.206

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Component Stockers USA

USA . 2 parts In-Stock

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$0.210

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2

$0.210

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AZTECH Wire

Italy . 393 parts In-Stock

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$19.120

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393

$19.120

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Problanco Electronics

Mexico . 8,352 parts In-Stock

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SupplyDigital Components

Austria . 7,336 parts In-Stock

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TANS Electronics

Latvia . 3,146 parts In-Stock

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Kulean Microsystems

USA . 2,494 parts In-Stock

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UHIMA Technologies

Türkiye . 582 parts In-Stock

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Continental Prestige Electronics

USA . 2 parts In-Stock

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$0.247

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Overview

Experience superior efficiency and performance with the MBR845RL by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are designed to meet your needs. The MBR845RL is perfect for applications where efficiency is key, offering a maximum output current of 8A and a maximum forward voltage of just 0.55V. Trust in the technology of Schottky diodes and the reliability of Onsemi to provide you with a product that will exceed your expectations. Upgrade your systems today with the MBR845RL and enjoy the benefits of improved performance and energy savings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the diode, making it durable and reliable for use in various applications.

Config: SINGLE

Single configuration diodes are easy to use and suitable for individual applications, making this product versatile and convenient for different circuit designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this diode can withstand extreme heat conditions, ensuring stable performance in challenging environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC current, making them ideal for power supply applications and ensuring efficient energy conversion.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can handle high power loads, making it suitable for applications that require robust performance.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed, enabling efficient energy conversion and reducing power losses in the circuit.

Maximum Repetitive Peak Reverse Voltage: 45 V

The high maximum repetitive peak reverse voltage of 45 V provides reliable reverse voltage protection, making this diode suitable for various circuit protection applications.

Diode Element Material: SILICON

Silicon diodes have good thermal stability and low leakage current, ensuring long-term reliability and performance consistency in different operating conditions.

Technical Specifications

Diodes & Rectifiers MBR845RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

R-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR845RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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