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MBR8170TFSTAG

Onsemi

MBR8170TFSTAG by Onsemi

MBR8170TFSTAG by Onsemi is a Schottky rectifier diode with a max output current of 8A and reverse test voltage of 170V. It is designed for applications requiring high efficiency and low forward voltage drop, making it ideal for power supplies, converters, and battery charging circuits.

Median Price

$1.605

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 675 parts In-Stock

1+ parts

$1.380

100+ parts

$0.719

1k+ parts

$0.552

10k+ parts

$0.483

675

$1.380

$0.719

$0.552

$0.483

DigiKey

USA . 1,365 parts In-Stock

1+ parts

$1.830

100+ parts

$0.776

1k+ parts

$0.612

10k+ parts

$0.455

1,365

$1.830

$0.776

$0.612

$0.455

Flip Electronics (Authorized)

USA . 4,110 parts In-Stock

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-

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4,110

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Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.541

100+ parts

-

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72

$0.541

-

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Digiode

USA . 2,294 parts In-Stock

1+ parts

$1.273

100+ parts

-

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2,294

$1.273

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Flip Electronics

USA . 4,110 parts In-Stock

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4,110

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DigiKey Marketplace

USA . 3,000 parts In-Stock

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3,000

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Vyrian

USA . 2,203 parts In-Stock

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2,203

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Distributors (Availability)

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Corohmni

South Africa . 198 parts In-Stock

1+ parts

$0.530

100+ parts

-

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-

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-

198

$0.530

-

-

-

Bastille Electronics

Australia . 196 parts In-Stock

1+ parts

$0.541

100+ parts

$0.514

1k+ parts

$0.488

10k+ parts

$0.481

196

$0.541

$0.514

$0.488

$0.481

Ampacity Inc.

Singapore . 2,132 parts In-Stock

1+ parts

$1.140

100+ parts

-

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2,132

$1.140

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Corphita

USA . 727 parts In-Stock

1+ parts

$1.206

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727

$1.206

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Microchip USA

USA . 408 parts In-Stock

1+ parts

$3.440

100+ parts

$3.420

1k+ parts

$3.410

10k+ parts

$3.400

408

$3.440

$3.420

$3.410

$3.400

Problanco Electronics

Mexico . 8,347 parts In-Stock

1+ parts

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8,347

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TANS Electronics

Latvia . 6,575 parts In-Stock

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6,575

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SupplyDigital Components

Austria . 5,180 parts In-Stock

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Kulean Microsystems

USA . 522 parts In-Stock

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522

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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382

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Overview

Discover the superior quality and reliability of the MBR8170TFSTAG by Onsemi, a leading manufacturer in the industry of Diodes & Rectifiers. This single configuration diode offers exceptional performance with a maximum output current of 8A and a reverse test voltage of 170V, making it ideal for a wide range of applications. With a package style of small outline and matte tin terminal finish, this Schottky diode ensures efficient operation in temperatures ranging from -55°C to 175°C. Trust Onsemi to deliver cutting-edge technology and unmatched value with the MBR8170TFSTAG, providing customers with reliable solutions for their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, ideal for various applications.

Maximum Reverse Current: 30 uA

Ensures minimal power loss and high efficiency.

Maximum Operating Temperature: 175 °C

Allows for reliable operation even in high temperature environments.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensuring efficient current flow.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching capability compared to standard diodes.

Technical Specifications

Diodes & Rectifiers MBR8170TFSTAG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

170 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

170 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

170 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR8170TFSTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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