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MBR840

Onsemi

MBR840 by Onsemi

The Onsemi MBR840 is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.55V. It operates at a max temperature of 125 °C, making it ideal for high-efficiency applications. The diode has a peak reverse voltage of 40V and non-repetitive forward current of 140A, housed in a plastic/epoxy package suitable for isolated case connections.

Median Price

$0.449

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,963 parts In-Stock

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$0.595

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-

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$0.396

10k+ parts

$0.368

1,963

$0.595

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$0.396

$0.368

Farnell

UK . 1,963 parts In-Stock

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-

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$0.259

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$0.174

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$0.259

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Element14

Singapore . 1,963 parts In-Stock

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$0.449

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$0.302

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1,963

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$0.449

$0.302

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Digiode

USA . 408 parts In-Stock

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$0.561

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$0.561

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Vyrian

USA . 2,475 parts In-Stock

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$0.591

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$0.591

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Connector Distribution Corp

USA . 26,940 parts In-Stock

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Right Parts Inc.

USA . 26,930 parts In-Stock

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Bristol Electronics

USA . 500 parts In-Stock

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Atlantic Semiconductor

USA . 500 parts In-Stock

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Microfarads

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Distributors (Availability)

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.164

100+ parts

$0.149

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$0.134

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$0.164

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Corphita

USA . 1,018 parts In-Stock

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$0.532

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Corohmni

South Africa . 447 parts In-Stock

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$0.545

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447

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Component Stockers USA

USA . 290 parts In-Stock

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$99.990

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$99.990

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SupplyDigital Components

Austria . 6,472 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,308 parts In-Stock

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TANS Electronics

Latvia . 727 parts In-Stock

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UHIMA Technologies

Türkiye . 284 parts In-Stock

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Overview

Experience unparalleled efficiency with the MBR840 diode by Onsemi. Crafted with precision and quality, this Schottky rectifier diode offers a maximum output current of 8A and a maximum forward voltage of 0.55V, making it ideal for applications requiring high performance. Whether you're in the automotive industry or working on power supplies, the MBR840 delivers exceptional reliability and value. Trust Onsemi's reputation for excellence and elevate your projects with this top-of-the-line diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Being made of plastic/epoxy, this diode has a high resistance to heat and has good insulating properties, making it reliable and durable for various applications.

Config: SINGLE

Single configuration makes the diode simple to use and suitable for basic rectification tasks, making it a cost-effective choice for standard applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy installation and placement on circuit boards, making it user-friendly and convenient for assembly.

Maximum Output Current: 8 A

With a high maximum output current of 8 A, this diode can handle heavy loads and provide efficient power conversion, making it ideal for applications that require high current capabilities.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop and faster switching, leading to improved efficiency and performance in various power supply applications.

Technical Specifications

Diodes & Rectifiers MBR840 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

R-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR840 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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