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MBR8170TFSTXG

Onsemi

MBR8170TFSTXG by Onsemi

MBR8170TFSTXG by Onsemi is a Schottky rectifier diode with 170V reverse test voltage, 8A max output current, and 0.89V max forward voltage. It is ideal for applications requiring high efficiency power conversion in small outline packages.

Median Price

$1.690

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,000 parts In-Stock

1+ parts

$1.690

100+ parts

$0.719

1k+ parts

$0.510

10k+ parts

$0.477

5,000

$1.690

$0.719

$0.510

$0.477

DigiKey

USA . 5,610 parts In-Stock

1+ parts

$1.830

100+ parts

$0.776

1k+ parts

$0.559

10k+ parts

$0.417

5,610

$1.830

$0.776

$0.559

$0.417

Flip Electronics (Authorized)

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,000

-

-

-

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Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.419

5,000

-

-

-

$0.419

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,122 parts In-Stock

1+ parts

$1.606

100+ parts

-

1k+ parts

-

10k+ parts

-

2,122

$1.606

-

-

-

Vyrian

USA . 1,174 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

-

10k+ parts

-

1,174

$1.690

-

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Flip Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,570 parts In-Stock

1+ parts

$1.521

100+ parts

-

1k+ parts

-

10k+ parts

-

1,570

$1.521

-

-

-

Corohmni

South Africa . 262 parts In-Stock

1+ parts

$1.690

100+ parts

-

1k+ parts

-

10k+ parts

-

262

$1.690

-

-

-

TANS Electronics

Latvia . 7,014 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,014

-

-

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Problanco Electronics

Mexico . 1,888 parts In-Stock

1+ parts

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100+ parts

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1,888

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SupplyDigital Components

Austria . 1,209 parts In-Stock

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1,209

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Kulean Microsystems

USA . 407 parts In-Stock

1+ parts

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100+ parts

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407

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UHIMA Technologies

Türkiye . 116 parts In-Stock

1+ parts

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100+ parts

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116

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Overview

Discover the power and efficiency of the MBR8170TFSTXG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. The MBR8170TFSTXG falls under the category of Diodes & Rectifiers, making it an essential component for various applications. With a maximum reverse voltage of 170V and a maximum output current of 8A, this rectifier diode offers exceptional performance. Experience the benefits of its Schottky technology, small outline package style, and matte tin terminal finish. Trust Onsemi to deliver high-quality components that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it ideal for various applications.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Current: 30 uA

Low reverse current ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

Can handle high operating temperatures, making it suitable for a wide range of environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product ideal for power supply applications.

Maximum Output Current: 8 A

Capable of handling high output currents, making it suitable for power applications that require high current ratings.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching times compared to standard diodes, improving efficiency and performance.

Technical Specifications

Diodes & Rectifiers MBR8170TFSTXG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

170 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

8

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

170 V

Maximum Reverse Current:

30 uA

Reverse Test Voltage:

170 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR8170TFSTXG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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