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MBR8H100MFST3G

Onsemi

MBR8H100MFST3G by Onsemi

MBR8H100MFST3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.9V and max output current of 8A. It is used for efficiency applications, has a max operating temperature of 175°C, and comes in a small outline package with dual terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Flip Electronics

USA . 65,000 parts In-Stock

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Chip Stock

USA . 52,000 parts In-Stock

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Vyrian

USA . 6,052 parts In-Stock

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Digiode

USA . 1,800 parts In-Stock

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Nova Conductors

Japan . 47 parts In-Stock

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47

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Aztec Data Supply Inc.

USA . 2,938 parts In-Stock

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$0.060

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$0.060

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Ampacity Inc.

Singapore . 1,549 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 258 parts In-Stock

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$14.052

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258

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Problanco Electronics

Mexico . 8,171 parts In-Stock

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TANS Electronics

Latvia . 4,784 parts In-Stock

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SupplyDigital Components

Austria . 3,231 parts In-Stock

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Corphita

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Kulean Microsystems

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Aranea Global

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Argo Parts USA

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Advanced Electronics

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Corohmni

South Africa . 397 parts In-Stock

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UHIMA Technologies

Türkiye . 17 parts In-Stock

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Overview

Discover the MBR8H100MFST3G by Onsemi, a high-quality rectifier diode that offers unbeatable efficiency and performance. Manufactured by Onsemi, a leading name in the industry, this diode is designed to meet the highest standards of reliability and durability. With its small outline package style and dual terminal position, it is perfect for a wide range of applications. Whether you need it for power supplies, battery charging, or voltage regulation, this diode delivers maximum output current of 8A and a maximum forward voltage of 0.9V. Experience the value and benefits it brings to your projects with its superior technology and excellent performance. Don't settle for anything less when it comes to your electronic needs – choose the MBR8H100MFST3G by Onsemi and enjoy optimal efficiency and reliability.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This product's plastic/epoxy package provides durability and protection, making it suitable for various environments.

Config:

SINGLE - The single configuration of this diode/rectifier allows for easy installation and compatibility with various circuit designs.

Surface Mount:

YES - The surface mount capability of this product enables convenient and efficient mounting onto circuit boards, saving space and simplifying assembly.

Maximum Reverse Current:

2 uA - With a low maximum reverse current, this diode/rectifier ensures efficient performance and minimal power loss, making it suitable for power-efficient applications.

Package Shape:

RECTANGULAR - The rectangular shape of the package allows for easy integration into circuit designs, providing versatility and compatibility.

No. of Terminals:

5 - The diode/rectifier's five terminals offer flexibility and accommodation for various connections, enhancing its usability in different circuit configurations.

Package Style (Meter):

SMALL OUTLINE - The small outline package style of this product makes it ideal for compact designs, where space is limited.

Application:

EFFICIENCY - Designed specifically for efficiency, this diode/rectifier is suitable for applications where energy conservation and optimal performance are crucial.

Maximum Operating Temperature:

175 °C - With a high maximum operating temperature, this diode/rectifier can operate reliably in harsh or demanding environments without compromising performance.

Minimum Operating Temperature:

55 °C - The low minimum operating temperature makes this diode/rectifier suitable for use in extreme cold conditions, ensuring stable operation even in harsh environments.

Terminal Finish:

MATTE TIN - The matte tin terminal finish of this product provides excellent solderability and conductivity, ensuring reliable connections and maintaining performance over time.

Terminal Position:

DUAL - The dual terminal position allows for flexible mounting options and ease of connection, offering versatility in circuit board layouts.

Case Connection:

CATHODE - The cathode case connection simplifies circuit design and ensures proper polarity, enhancing the overall efficiency and usability of this diode/rectifier.

Maximum Time At Peak Reflow Temperature (s):

30 - This product's maximum time at peak reflow temperature ensures compatibility with standard soldering processes, making it easy to integrate into manufacturing processes.

Peak Reflow Temperature °C:

260 - With a high peak reflow temperature, this diode/rectifier can withstand high-temperature soldering processes, ensuring reliability and durability during assembly.

Diode Type:

RECTIFIER DIODE - As a rectifier diode, this product is essential for converting alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF):

0.9 V - With a low maximum forward voltage, this diode/rectifier minimizes voltage drop and power loss, ensuring efficient performance in electrical circuits.

Maximum Output Current:

8 A - With a high maximum output current, this diode/rectifier can handle substantial electrical loads, making it suitable for power-intensive applications.

Technology:

SCHOTTKY - The Schottky technology of this diode/rectifier provides low forward voltage drop and fast switching characteristics, making it ideal for high-frequency applications.

Terminal Form:

FLAT - The flat terminal form of this product offers ease of soldering and secure connections, simplifying assembly and ensuring reliable performance.

No. of Elements:

1 - This diode/rectifier consists of a single element, making it a simple and straightforward component to use in circuit designs.

Maximum Repetitive Peak Reverse Voltage:

100 V - With a high maximum repetitive peak reverse voltage rating, this diode/rectifier can handle high-voltage applications, ensuring reliability and safety.

Moisture Sensitivity Level (MSL):

1 - This diode/rectifier has a low moisture sensitivity level, indicating its resilience to moisture exposure during storage and assembly, enhancing its reliability.

No. of Phases:

1 - As a single-phase diode/rectifier, this product is suitable for use in single-phase electrical systems, offering simplicity and ease of integration.

Maximum Non Repetitive Peak Forward Current:

75 A - The high maximum non-repetitive peak forward current rating makes this diode/rectifier suitable for applications that require momentary high-current pulses.

Diode Element Material:

SILICON - Constructed with silicon as the diode element material, this product offers excellent electrical characteristics and reliability, making it a widely used and reliable choice in various applications.

Technical Specifications

Diodes & Rectifiers MBR8H100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR8H100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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