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MBR860MFST3G

Onsemi

MBR860MFST3G by Onsemi

MBR860MFST3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 175 °C. This single-config diode has a small outline package with dual terminals and surface mount capability.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 6,411 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 292 parts In-Stock

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$19.440

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TANS Electronics

Latvia . 7,672 parts In-Stock

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Kulean Microsystems

USA . 5,760 parts In-Stock

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Problanco Electronics

Mexico . 4,234 parts In-Stock

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Corphita

USA . 1,333 parts In-Stock

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SupplyDigital Components

Austria . 1,121 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Experience enhanced efficiency and performance with the MBR860MFST3G diode rectifier by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this small outline package offers a maximum output current of 8A and a maximum forward voltage of 0.8V. Ideal for a wide range of applications, including power supplies and battery chargers, this Schottky diode provides reliable and consistent performance in a compact form factor. Upgrade your electronic devices with the MBR860MFST3G and enjoy the benefits of superior quality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides high durability and resistance to environmental factors, making the product reliable for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, reducing complexity and potential points of failure.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 150 uA

Low reverse current ensures minimal power loss and high efficiency in the performance of the diode.

Package Shape: RECTANGULAR

The rectangular shape enables space-saving installation and efficient use of PCB real estate.

No. of Terminals: 5

Having 5 terminals allows for versatile connectivity options and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates compact designs, ideal for applications with size constraints.

Application: EFFICIENCY

Designed for efficiency-focused applications, this product ensures optimal performance and energy savings.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, the diode can withstand challenging thermal environments without performance degradation.

Minimum Operating Temperature: -55 °C

The wide range of operating temperatures allows for reliable performance in varying environmental conditions, enhancing product versatility.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring robust electrical connections in the circuit.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and compatibility with different circuit configurations.

Case Connection: CATHODE

The cathode case connection simplifies polarity identification and prevents reverse biasing, enhancing operational safety.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures quick and reliable soldering process during product assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the diode can withstand soldering processes without damage, ensuring long-term reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient rectification of AC power to DC, suitable for various power supply and conversion applications.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop minimizes power dissipation and enhances energy efficiency in the circuit.

Maximum Output Current: 8 A

High output current rating enables the diode to handle large loads and power requirements, increasing its versatility.

Technology: SCHOTTKY

Schottky technology offers fast switching speed, low forward voltage drop, and high efficiency, making it ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminal form provides easy and secure soldering connections, ensuring reliable electrical contact in the circuit.

Maximum Repetitive Peak Reverse Voltage: 60 V

High reverse voltage rating allows for safe operation in circuits with varying reverse voltage requirements.

Maximum Non Repetitive Peak Forward Current: 150 A

The high non-repetitive peak forward current rating ensures robust performance under transient overload conditions, enhancing product reliability.

Diode Element Material: SILICON

Silicon diode element material offers high conductivity, temperature stability, and durability, ensuring long-lasting performance in the circuit.

Technical Specifications

Diodes & Rectifiers MBR860MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

150 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR860MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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