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MBR8H100MFST1G

Onsemi

MBR8H100MFST1G by Onsemi

MBR8H100MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 100V. It operates efficiently with a low forward voltage of 0.9V, making it suitable for applications requiring high power efficiency. The diode's small outline package and surface mount capability enhance its versatility in various electronic designs.

Median Price

$0.450

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,351 parts In-Stock

1+ parts

$0.450

100+ parts

$0.368

1k+ parts

$0.343

10k+ parts

$0.283

6,351

$0.450

$0.368

$0.343

$0.283

DigiKey

USA . 943 parts In-Stock

1+ parts

$0.450

100+ parts

$0.367

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-

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$0.268

943

$0.450

$0.367

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$0.268

EBV Elektronik

Germany . 1,500 parts In-Stock

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1,500

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Verical

USA . 1,500 parts In-Stock

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$0.257

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$0.257

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

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$0.373

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700

$0.373

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Digiode

USA . 1,026 parts In-Stock

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$0.542

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1,026

$0.542

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Vyrian

USA . 9,006 parts In-Stock

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9,006

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NAC Semi

USA . 1,500 parts In-Stock

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$0.709

1,500

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$0.709

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,709 parts In-Stock

1+ parts

$0.030

100+ parts

-

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4,709

$0.030

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Corohmni

South Africa . 452 parts In-Stock

1+ parts

$0.358

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452

$0.358

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Continental Prestige Electronics

USA . 3,535 parts In-Stock

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$0.373

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$0.366

3,535

$0.373

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$0.366

Argo Parts USA

USA . 1,724 parts In-Stock

1+ parts

$0.373

100+ parts

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$0.362

1,724

$0.373

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$0.362

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.380

100+ parts

$0.380

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$0.380

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1,000

$0.380

$0.380

$0.380

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Semicontronic

India . 9,207 parts In-Stock

1+ parts

$0.484

100+ parts

$0.472

1k+ parts

$0.469

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9,207

$0.484

$0.472

$0.469

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Ampacity Inc.

Singapore . 8,990 parts In-Stock

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$0.484

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$0.484

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Corphita

USA . 982 parts In-Stock

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$0.513

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Perfect Parts

USA . 39,316 parts In-Stock

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TANS Electronics

Latvia . 5,782 parts In-Stock

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SupplyDigital Components

Austria . 4,905 parts In-Stock

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Lixinc

USA . 2,491 parts In-Stock

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Kulean Microsystems

USA . 1,820 parts In-Stock

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Problanco Electronics

Mexico . 1,252 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.366

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$0.354

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$0.347

1,000

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$0.366

$0.354

$0.347

UHIMA Technologies

Türkiye . 91 parts In-Stock

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91

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Overview

Discover the superior quality and efficiency of the MBR8H100MFST1G diode by Onsemi. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 100V, this SCHOTTKY technology diode offers exceptional performance for various applications. From power supplies to battery chargers, this product provides reliable functionality and long-lasting durability. Trust in Onsemi's reputation for excellence and choose the MBR8H100MFST1G for all your rectifying needs. Experience the benefits of seamless operation and high efficiency with this top-of-the-line diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this diode highly durable and resistant to environmental factors, ensuring long-lasting performance.

Config: SINGLE

The single configuration of this diode simplifies installation and troubleshooting processes, making it a user-friendly option.

Surface Mount: YES

With surface mount capability, this diode can be easily integrated into compact electronic devices, saving space and simplifying assembly.

Maximum Reverse Current: 2 uA

The low maximum reverse current of 2 uA ensures efficient operation and minimal power loss, making this diode ideal for high-performance applications.

Package Shape: RECTANGULAR

The rectangular shape of the package provides easy mounting and alignment, enhancing the overall usability of this diode.

No. of Terminals: 5

The presence of 5 terminals allows for versatile connectivity options, making this diode suitable for a wide range of circuit configurations.

Package Style: SMALL OUTLINE

The small outline package style of this diode enables space-saving installation in tight spaces, making it a versatile choice for compact electronic designs.

Application: EFFICIENCY

Designed for efficiency, this diode is a reliable choice for applications that require low power consumption and high performance.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this diode can withstand extreme conditions and deliver consistent performance in challenging environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures reliable operation even in cold environments, making this diode suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed

The annealed matte tin terminal finish provides excellent solderability and reliability, ensuring secure connections and long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation, allowing for various wiring configurations to suit specific requirements.

Case Connection: CATHODE

With a cathode case connection, this diode simplifies circuit layout and enhances electrical conductivity, making it a convenient choice for users.

Maximum Time At Peak Reflow Temperature: 30s

The maximum time of 30 seconds at peak reflow temperature ensures proper soldering and assembly, reducing the risk of damage during installation.

Peak Reflow Temperature: 260 °C

The peak reflow temperature of 260°C guarantees secure and reliable soldering, ensuring the longevity and performance of this diode.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is optimized for converting AC to DC current with minimal voltage drop, making it a reliable choice for power supply applications.

Maximum Forward Voltage (VF): 0.9 V

The low maximum forward voltage of 0.9 V minimizes power loss and improves efficiency, making this diode ideal for high-performance circuits.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can handle high power loads effectively, making it suitable for demanding applications.

Technology: SCHOTTKY

The Schottky technology used in this diode ensures fast switching speeds and low forward voltage drop, providing high efficiency and reliability in operation.

Terminal Form: FLAT

The flat terminal form of this diode simplifies installation and ensures a secure connection, enhancing the overall reliability and performance of the device.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage of 100 V allows this diode to handle voltage spikes and fluctuations effectively, making it a durable and dependable choice for various applications.

Maximum Non Repetitive Peak Forward Current: 75 A

With a maximum non-repetitive peak forward current of 75 A, this diode can withstand short-duration high-current pulses, making it suitable for high-power applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures excellent performance and reliability, making this diode a durable and long-lasting component for electronic circuits.

Technical Specifications

Diodes & Rectifiers MBR8H100MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR8H100MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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