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MBR835

Onsemi

MBR835 by Onsemi

The Onsemi MBR835 is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.55V. It operates at temperatures up to 125 °C, making it ideal for high-efficiency applications. The diode has a peak reverse voltage of 35V and non-repetitive forward current of 140A, housed in a plastic/epoxy package with isolated case connection.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 1,845 parts In-Stock

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Digiode

USA . 1,340 parts In-Stock

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R&J Components

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Bristol Electronics

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.077

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$0.070

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$0.063

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Andel Nordic

Denmark . 2,418 parts In-Stock

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$2.099

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 6,391 parts In-Stock

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Problanco Electronics

Mexico . 6,316 parts In-Stock

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SupplyDigital Components

Austria . 6,171 parts In-Stock

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Kulean Microsystems

USA . 4,350 parts In-Stock

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Corphita

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Corohmni

South Africa . 363 parts In-Stock

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UHIMA Technologies

Türkiye . 47 parts In-Stock

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Overview

Experience unparalleled efficiency and reliability with the MBR835 by Onsemi. Crafted with precision and expertise, this Schottky rectifier diode offers a seamless performance in various applications, ensuring optimal functionality and long-term durability. With a maximum output current of 8A and a peak repetitive reverse voltage of 35V, this diode is designed to deliver exceptional results. Trust Onsemi's reputation for excellence and choose the MBR835 for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides lightweight and durable packaging for the diode, making it suitable for various applications.

Config: SINGLE

Simplifies the circuit design as only one diode is needed for the application.

No. of Terminals: 2

Easy to install and connect in the circuit due to the limited number of terminals.

Maximum Operating Temperature: 125 °C

Ensures stable performance even under high operating temperatures, improving efficiency.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying alternating current, making it suitable for efficiency applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop leads to reduced power loss and higher efficiency in the circuit.

Maximum Output Current: 8 A

Capable of handling high output currents, making it suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower forward voltage, improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 35 V

Can withstand high reverse voltages, providing protection to the circuit.

Technical Specifications

Diodes & Rectifiers MBR835 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

R-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR835 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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