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MBR440MFST1G

Onsemi

MBR440MFST1G by Onsemi

MBR440MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.65V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This diode has a max reverse voltage of 40V and non-repetitive peak forward current of 40A, ideal for various electronic circuits.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

$0.173

1k+ parts

$0.143

10k+ parts

$0.128

6,500

-

$0.173

$0.143

$0.128

DigiKey

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.230

6,500

-

-

-

$0.230

Verical

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.167

6,500

-

-

-

$0.167

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,442 parts In-Stock

1+ parts

$0.141

100+ parts

-

1k+ parts

-

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1,442

$0.141

-

-

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Vyrian

USA . 5,425 parts In-Stock

1+ parts

-

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5,425

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,078 parts In-Stock

1+ parts

$0.133

100+ parts

-

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-

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-

2,078

$0.133

-

-

-

Corohmni

South Africa . 172 parts In-Stock

1+ parts

$0.148

100+ parts

-

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172

$0.148

-

-

-

AZTECH Wire

Italy . 200 parts In-Stock

1+ parts

$21.120

100+ parts

-

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200

$21.120

-

-

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Continental Prestige Electronics

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.178

10k+ parts

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6,500

-

-

$0.178

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Kulean Microsystems

USA . 3,458 parts In-Stock

1+ parts

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3,458

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Problanco Electronics

Mexico . 3,349 parts In-Stock

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3,349

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QUARKTWIN TECHNOLOGY LTD

USA . 2,222 parts In-Stock

1+ parts

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2,222

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TANS Electronics

Latvia . 1,950 parts In-Stock

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1,950

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SupplyDigital Components

Austria . 259 parts In-Stock

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259

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UHIMA Technologies

Türkiye . 256 parts In-Stock

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256

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Overview

Experience the power of efficiency with the MBR440MFST1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are essential for a wide range of applications. With its Schottky technology, this single-configured diode offers a maximum forward voltage of only 0.65V and a maximum output current of 4A, providing customers with superior performance and reliability. Whether used in power supplies, voltage regulators, or battery chargers, the MBR440MFST1G is the perfect choice for those seeking high-quality components that deliver exceptional value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the diode durable and reliable.

Config: SINGLE

Single configuration makes it easy to integrate into various circuit designs.

Surface Mount: YES

Ease of installation and space-saving in PCB designs.

Maximum Reverse Current: 800 uA

Low reverse current ensures efficient performance of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for compact placement on PCBs.

No. of Terminals: 5

Provides multiple connection options for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact design enables efficient use of space in electronic devices.

Application: EFFICIENCY

Designed for high efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures, suitable for various environments.

Minimum Operating Temperature: -55 °C

Can operate in extreme low-temperature conditions, providing versatility.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections.

Case Connection: CATHODE

Cathode case connection simplifies circuit layout and design.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures quick and efficient soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable solder joints.

Diode Type: RECTIFIER DIODE

Rectifier diode for converting alternating current to direct current efficiently.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 4 A

High output current capability for powering various electronic devices.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds.

Terminal Form: FLAT

Flat terminals for easy and secure soldering connections.

Maximum Repetitive Peak Reverse Voltage: 40 V

Suitable for applications requiring up to 40 volts reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 40 A

Capable of handling short duration high forward currents without damage.

Diode Element Material: SILICON

Silicon material for reliable and stable diode performance.

Technical Specifications

Diodes & Rectifiers MBR440MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

800 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR440MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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