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MBR40H100WTG

Onsemi

MBR40H100WTG by Onsemi

MBR40H100WTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max forward voltage of 0.67V. It is designed for efficiency applications with a max output current of 20A and a max repetitive peak reverse voltage of 100V.

Median Price

$5.800

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,000 parts In-Stock

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-

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$4.630

10k+ parts

$4.630

3,000

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$4.630

$4.630

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Rochester

USA . 55 parts In-Stock

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$5.800

1k+ parts

$5.190

10k+ parts

$4.880

55

-

$5.800

$5.190

$4.880

Verical

USA . 55 parts In-Stock

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$7.987

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55

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$7.987

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Distributors (In-Stock)

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Vyrian

USA . 1,304 parts In-Stock

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$4.630

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1,304

$4.630

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Digiode

USA . 913 parts In-Stock

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$6.422

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913

$6.422

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Chip Stock

USA . 7,500 parts In-Stock

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7,500

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Flip Electronics

USA . 1,598 parts In-Stock

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1,598

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ComSIT Distribution GmbH

Germany . 240 parts In-Stock

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Sunrise Surplus Inc.

USA . 8 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 347 parts In-Stock

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$4.630

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347

$4.630

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Corphita

USA . 1,318 parts In-Stock

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$6.084

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1,318

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Perfect Parts

USA . 47,458 parts In-Stock

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Problanco Electronics

Mexico . 8,106 parts In-Stock

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TANS Electronics

Latvia . 7,764 parts In-Stock

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Kulean Microsystems

USA . 4,943 parts In-Stock

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SupplyDigital Components

Austria . 3,497 parts In-Stock

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3,497

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kepictronics

USA . 1,980 parts In-Stock

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1,980

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UHIMA Technologies

Türkiye . 741 parts In-Stock

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741

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Overview

Discover the power of efficiency with the MBR40H100WTG by Onsemi. This high-quality diode offers reliable performance and durability, thanks to Onsemi's reputation for excellence in manufacturing. Perfect for a wide range of applications, this rectifier diode provides maximum output current of 20A, making it ideal for boosting your system's efficiency. Say goodbye to downtime and hello to increased productivity with the MBR40H100WTG. Upgrade your operations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good protection and insulation for the diode elements, ensuring reliability and longevity.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, while having 2 elements provides redundancy and higher current handling capacity.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and position the diode in various applications.

Maximum Operating Temperature: 175 °C

The high operating temperature allows the diode to function in demanding environments without compromising performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for efficient current rectification, making them suitable for high-efficiency applications.

Technology: SCHOTTKY

Schottky technology provides lower forward voltage drop and faster switching speeds compared to conventional diodes, enhancing overall efficiency.

Maximum Output Current: 20 A

With a high output current rating, this diode can handle significant loads in various circuits.

Technical Specifications

Diodes & Rectifiers MBR40H100WTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR40H100WTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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