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MBR4045WT

Onsemi

MBR4045WT by Onsemi

The Onsemi MBR4045WT is a Schottky rectifier diode with 45V max reverse voltage and 20A max output current. Common cathode config, suitable for efficiency applications. Operating temp range -65 to 175 °C, package style flange mount, ideal for high-power electronics.

Median Price

$1.360

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,478 parts In-Stock

1+ parts

$2.870

100+ parts

$1.269

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$0.941

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$0.775

3,478

$2.870

$1.269

$0.941

$0.775

Verical

USA . 1,920 parts In-Stock

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$1.152

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Rochester

USA . 26 parts In-Stock

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$1.360

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$1.220

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$1.140

26

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$1.140

Distributors (In-Stock)

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Freelance Electronics

USA . 30 parts In-Stock

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$1.113

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$1.169

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$1.102

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$1.113

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Digiode

USA . 716 parts In-Stock

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Vyrian

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TEDSS.com

USA . 830 parts In-Stock

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$2.500

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$1.990

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830

$2.500

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TME

Poland . 475 parts In-Stock

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$2.930

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$1.300

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$0.970

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$0.910

475

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$1.300

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$0.910

PC Components Company LLC

USA . 845 parts In-Stock

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ABC Electronics Ltd.

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Corel Iberica Componentes, S.L.

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IBS Electronics

USA . 600 parts In-Stock

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$0.838

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$0.795

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$0.767

600

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$0.838

$0.795

$0.767

NAC Semi

USA . 475 parts In-Stock

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$0.931

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475

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$0.931

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ComSIT Distribution GmbH

Germany . 370 parts In-Stock

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Chip Stock

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J2 Sourcing AB

Sweden . 205 parts In-Stock

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Q Components

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R&J Components

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Bristol Electronics

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Atlantic Semiconductor

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MISTER SPROCKETS

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LittleDiode

UK . 3 parts In-Stock

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LWI Electronics Inc

India . 3 parts In-Stock

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Cogito LLC

Ukraine . 1 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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$1.113

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Corphita

USA . 1,295 parts In-Stock

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$1.368

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Component Stockers USA

USA . 2,807 parts In-Stock

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$2.520

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$1.660

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$1.190

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RC Electronics

USA . 45,581 parts In-Stock

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$1.720

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$1.570

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$1.520

QUARKTWIN TECHNOLOGY LTD

USA . 22,712 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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TANS Electronics

Latvia . 7,521 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,257 parts In-Stock

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SupplyDigital Components

Austria . 6,033 parts In-Stock

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Kulean Microsystems

USA . 5,805 parts In-Stock

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Microchip USA

USA . 5,436 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 1,618 parts In-Stock

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UHIMA Technologies

Türkiye . 817 parts In-Stock

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Problanco Electronics

Mexico . 359 parts In-Stock

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West Coast Incorporated

USA . 330 parts In-Stock

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Overview

Unlock new possibilities with the MBR4045WT by Onsemi. Expertly crafted in a durable plastic/epoxy package, this common cathode diode offers unparalleled efficiency in a wide range of applications. From power supplies to battery chargers, this Schottky rectifier diode delivers reliable performance at temperatures ranging from -65 °C to 175°C. With a maximum output current of 20A and a peak repetitive peak reverse voltage of 45V, this product is designed to exceed your expectations. Trust Onsemi's proven track record for quality and innovation, and experience the difference with the MBR4045WT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and with 2 elements, the diode can handle higher currents.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient mounting and space-saving in electronic devices.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, enhancing efficiency.

Maximum Repetitive Peak Reverse Voltage: 45 V

With a high reverse voltage tolerance, the diodes can handle voltage spikes and protect the circuit.

Technical Specifications

Diodes & Rectifiers MBR4045WT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR4045WT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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