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MBR41H100CT

Onsemi

MBR41H100CT by Onsemi

The Onsemi MBR41H100CT is a Schottky rectifier diode with 2 elements in common cathode configuration. It has a max output current of 20A and a max repetitive peak reverse voltage of 100V. Ideal for applications requiring high efficiency, it operates at temperatures up to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,846 parts In-Stock

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Digiode

USA . 1,295 parts In-Stock

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AZTECH Wire

Italy . 573 parts In-Stock

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$20.700

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Component Stockers USA

USA . 539 parts In-Stock

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$99.990

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 7,418 parts In-Stock

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SupplyDigital Components

Austria . 7,199 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,781 parts In-Stock

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Problanco Electronics

Mexico . 1,148 parts In-Stock

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TANS Electronics

Latvia . 1,078 parts In-Stock

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UHIMA Technologies

Türkiye . 638 parts In-Stock

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Corphita

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Corohmni

South Africa . 82 parts In-Stock

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Overview

Looking for a reliable diode and rectifier solution? Look no further than the Onsemi MBR41H100CT. Manufactured by Onsemi, a trusted name in the industry, this product offers superior quality and performance. With a common cathode configuration and two elements, this diode is perfect for efficiency applications. The Schottky technology ensures optimal performance, while the maximum repetitive peak reverse voltage of 100V provides peace of mind. Trust Onsemi for all your diode and rectifier needs and experience the value and benefits that the MBR41H100CT brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making the product long-lasting and resistant to environmental factors.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient circuit design and easy integration into existing systems.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring stable performance even in demanding environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification tasks, ensuring efficient power conversion.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching capabilities, improving overall efficiency.

Maximum Output Current: 20 A

Capable of handling high currents, making it suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

Provides reliable reverse voltage protection, preventing damage to the circuit.

Technical Specifications

Diodes & Rectifiers MBR41H100CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBR41H100CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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