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MBR4015LWTG

Onsemi

MBR4015LWTG by Onsemi

MBR4015LWTG by Onsemi is a Schottky rectifier diode with 2 elements in a common cathode configuration. It has a max forward voltage of 0.36V and can handle an output current of up to 20A, making it suitable for power applications. With a max operating temperature of 150 °C and min of -55°C, it is ideal for various electronic devices requiring high efficiency and reliability.

Median Price

$4.275

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 863 parts In-Stock

1+ parts

$1.900

100+ parts

-

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863

$1.900

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Rochester

USA . 863 parts In-Stock

1+ parts

-

100+ parts

$3.700

1k+ parts

$3.310

10k+ parts

$3.110

863

-

$3.700

$3.310

$3.110

DigiKey

USA . 863 parts In-Stock

1+ parts

-

100+ parts

$5.100

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863

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$5.100

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Flip Electronics (Authorized)

USA . 330 parts In-Stock

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330

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Verical

USA . 190 parts In-Stock

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$4.850

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190

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$4.850

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Distributors (In-Stock)

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Digiode

USA . 1,390 parts In-Stock

1+ parts

$1.805

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1,390

$1.805

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Vyrian

USA . 5,766 parts In-Stock

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5,766

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Flip Electronics

USA . 330 parts In-Stock

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330

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DigiKey Marketplace

USA . 330 parts In-Stock

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330

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ComSIT Distribution GmbH

Germany . 37 parts In-Stock

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37

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Distributors (Availability)

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Corphita

USA . 597 parts In-Stock

1+ parts

$1.710

100+ parts

-

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597

$1.710

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Corohmni

South Africa . 334 parts In-Stock

1+ parts

$1.900

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334

$1.900

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Component Stockers USA

USA . 1,153 parts In-Stock

1+ parts

$4.440

100+ parts

$4.180

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1,153

$4.440

$4.180

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Microchip USA

USA . 7,142 parts In-Stock

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$26.845

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7,142

$26.845

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QUARKTWIN TECHNOLOGY LTD

USA . 27,400 parts In-Stock

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27,400

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Kepictronics

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 8,277 parts In-Stock

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SupplyDigital Components

Austria . 7,021 parts In-Stock

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7,021

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Problanco Electronics

Mexico . 5,441 parts In-Stock

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5,441

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TANS Electronics

Latvia . 3,536 parts In-Stock

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3,536

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GreenTree Electronics

Israel . 120 parts In-Stock

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120

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Legend Electronics Inc. (Excess)

USA . 120 parts In-Stock

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120

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Speed Components Ltd (Excess)

Israel . 120 parts In-Stock

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120

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Perfect Parts

USA . 29 parts In-Stock

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29

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UHIMA Technologies

Türkiye . 23 parts In-Stock

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23

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Overview

Discover the power and reliability of the MBR4015LWTG by Onsemi. This high-quality diode offers customers a durable and efficient solution for their power applications. Manufactured by industry leader Onsemi, this product boasts superior performance and longevity, making it a top choice for professionals seeking a reliable rectifier diode. Whether you're working on power supplies, converters, or inverters, the MBR4015LWTG is the ideal component to ensure smooth and efficient operation. Upgrade your projects with the value and benefits of this innovative diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration and 2 elements design allow for easy integration into circuits and provides efficient performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance even in demanding conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows for usage in a wide range of environments.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is ideal for converting alternating current (AC) to direct current (DC) efficiently.

Technology: SCHOTTKY

The Schottky technology used in these diodes results in low forward voltage drop and fast switching speeds, enhancing overall performance.

Technical Specifications

Diodes & Rectifiers MBR4015LWTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR4015LWTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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