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MBR4060PT

Onsemi

MBR4060PT by Onsemi

MBR4060PT by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 40A. It operates b/w -65°C to 150°C, ideal for high-efficiency applications. With a max power dissipation of 3W and a package style of flange mount, it offers reliable performance in various electronic circuits.

Median Price

$1.658

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 293 parts In-Stock

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$3.600

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$1.840

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$1.340

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293

$3.600

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$1.340

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DigiKey

USA . 32,924 parts In-Stock

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$1.790

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$1.790

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Rochester

USA . 32,724 parts In-Stock

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$1.290

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$1.160

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$1.090

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Verical

USA . 31,800 parts In-Stock

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$1.525

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$1.425

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Distributors (In-Stock)

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Digiode

USA . 1,474 parts In-Stock

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Vyrian

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TME

Poland . 16 parts In-Stock

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$2.950

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$1.960

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American Microsemiconductor Inc.

USA . 299 parts In-Stock

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Electronic Expediters

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Chip Stock

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Holdelec - ElecDif-Pro

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Schukat

Germany . 615 parts In-Stock

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$1.658

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$1.322

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LWI Electronics Inc

India . 600 parts In-Stock

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Velocity Electronics

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ComSIT Distribution GmbH

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Micros

Poland . 390 parts In-Stock

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$0.915

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$0.836

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390

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Partservice

France . 384 parts In-Stock

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$0.895

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$0.818

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$0.818

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$0.818

Micros sp.j. W. Kędra i J. Lic

Poland . 299 parts In-Stock

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$0.959

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$0.876

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$0.876

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$0.876

Electronics Depot

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Standard Data Resources

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Corel Iberica Componentes, S.L.

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A2Z Electronics, Inc.

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J & M Industries LLC

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Tech-Mark Corp

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LittleDiode

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Corohmni

South Africa . 347 parts In-Stock

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$0.881

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Corphita

USA . 2,813 parts In-Stock

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$1.368

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Component Stockers USA

USA . 85 parts In-Stock

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$1.560

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$1.470

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$1.330

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$1.330

85

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$1.330

Microchip USA

USA . 2,076 parts In-Stock

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$5.421

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Problanco Electronics

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Perfect Parts

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 237 parts In-Stock

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GreenTree Electronics

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Overview

Unleash the power of efficiency with the MBR4060PT diode rectifier by Onsemi. Crafted with precision and quality, this product offers customers a reliable solution for their electronic applications. With a maximum output current of 40A and a maximum repetitive peak reverse voltage of 60V, this Schottky technology diode ensures optimal performance and durability. Whether you're looking to boost energy efficiency or enhance power management, the MBR4060PT is the perfect choice for your needs. Trust in Onsemi's expertise and invest in a product that delivers value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and having 2 elements enhances efficiency.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance even in demanding applications.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop, fast switching speeds, and high efficiency, making them ideal for power applications.

Maximum Output Current: 40 A

High output current rating allows for handling of large current loads, making this product suitable for power applications.

Technical Specifications

Diodes & Rectifiers MBR4060PT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.72 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR4060PT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-412-7924, 5961014127924

NIIN

014127924

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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