Loading...

NSR05F30QNXT5G

Onsemi

NSR05F30QNXT5G by Onsemi

NSR05F30QNXT5G by Onsemi is a Schottky rectifier diode with 30V reverse voltage, 0.36V forward voltage, and 0.5A output current. Ideal for applications requiring high efficiency power conversion in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,493

-

-

-

-

Digiode

USA . 270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

270

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.107

100+ parts

$0.097

1k+ parts

$0.088

10k+ parts

-

350

$0.107

$0.097

$0.088

-

AZTECH Wire

Italy . 97 parts In-Stock

1+ parts

$15.140

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$15.140

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 28,933 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,933

-

-

-

-

Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

Kulean Microsystems

USA . 7,803 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,803

-

-

-

-

SupplyDigital Components

Austria . 3,187 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,187

-

-

-

-

Problanco Electronics

Mexico . 2,203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,203

-

-

-

-

TANS Electronics

Latvia . 1,939 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,939

-

-

-

-

Corphita

USA . 1,906 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,906

-

-

-

-

UHIMA Technologies

Türkiye . 787 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

787

-

-

-

-

Corohmni

South Africa . 262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

262

-

-

-

-

Overview

Discover the ultimate solution for your diode and rectifier needs with the NSR05F30QNXT5G by Onsemi. Known for their superior quality and reliability, Onsemi is a trusted manufacturer in the industry. This Schottky rectifier diode offers peak performance with a maximum forward voltage of only 0.36V and a maximum output current of 0.5A, making it an ideal choice for various applications. Whether you're working on power supplies, converters, or battery chargers, this product delivers efficiency and value that you can count on. Upgrade to the NSR05F30QNXT5G today and experience the difference!

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easier to install and use in various applications without the need for additional components.

Surface Mount: YES

Surface mount capability allows for easy integration onto printed circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand elevated temperature environments without degradation in performance.

Terminal Finish: NICKEL GOLD

Nickel gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this diode can withstand the soldering process during assembly without any damage.

Diode Type: RECTIFIER DIODE

Rectifier diode type is well-suited for converting alternating current (AC) to direct current (DC), making this diode versatile for power supply applications.

Maximum Forward Voltage (VF): 0.36 V

Low maximum forward voltage of 0.36V ensures minimal voltage drop across the diode, resulting in efficient power conversion.

Maximum Output Current: 0.5 A

With a maximum output current of 0.5A, this diode can handle moderate current loads, suitable for various electronic circuits.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications and reduced power dissipation.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage of 30V ensures reliable operation in reverse bias conditions, protecting the circuit from voltage spikes.

Maximum Non Repetitive Peak Forward Current: 10 A

With a high maximum non-repetitive peak forward current of 10A, this diode can withstand short-duration overload conditions, ensuring robust performance.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, temperature stability, and low leakage current, making this diode suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NSR05F30QNXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.5 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

NICKEL GOLD

Trade Compliance

NSR05F30QNXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20