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NSR0130P2T5G

Onsemi

NSR0130P2T5G by Onsemi

NSR0130P2T5G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.385V and output current of 0.1A. It operates b/w -55 to 125°C, ideal for applications requiring high-speed switching in small outline packages.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,349,875 parts In-Stock

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$0.025

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DigiKey

USA . 19,355 parts In-Stock

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$0.170

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$0.080

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$0.047

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$0.026

19,355

$0.170

$0.080

$0.047

$0.026

Verical

USA . 6,349,875 parts In-Stock

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$0.023

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6,349,875

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Rochester

USA . 535,534 parts In-Stock

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$0.042

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$0.035

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$0.031

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$0.031

Future Electronics

Canada . 88,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 40,000 parts In-Stock

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EBV Elektronik

Germany . 8,000 parts In-Stock

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Element14

Singapore . 4,065 parts In-Stock

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$0.099

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$0.060

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$0.045

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$0.099

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$0.045

Farnell

UK . 595 parts In-Stock

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$0.040

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$0.037

595

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Chip1Stop

Japan . 18 parts In-Stock

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$0.021

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Digiode

USA . 2,209 parts In-Stock

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$0.024

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Nova Conductors

Japan . 10 parts In-Stock

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$0.076

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10

$0.076

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TME

Poland . 4,219 parts In-Stock

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$0.150

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$0.077

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$0.070

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4,219

$0.150

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IBS Electronics

USA . 444,320 parts In-Stock

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$0.288

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$0.051

444,320

$0.288

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$0.051

Ozdisan Elektronik

Türkiye . 2,219 parts In-Stock

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$76.173

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2,219

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Sensible Micro Corp

USA . 2,401,740 parts In-Stock

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Vyrian

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NAC Semi

USA . 248,000 parts In-Stock

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$0.078

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Flip Electronics

USA . 16,000 parts In-Stock

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Prism Electronics

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ComSIT Distribution GmbH

Germany . 6,619 parts In-Stock

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Cyclops Electronics Ltd

UK . 5,867 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

USA . 3,296 parts In-Stock

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Microfarads

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Holdelec - ElecDif-Pro

France . 150 parts In-Stock

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Semtec, LLC

USA . 70 parts In-Stock

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70

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,078,984 parts In-Stock

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$0.018

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Semicontronic

India . 1,078,774 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Corphita

USA . 1,467 parts In-Stock

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Argo Parts USA

USA . 3,536 parts In-Stock

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$0.073

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Netroflash

USA . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,881 parts In-Stock

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$0.180

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Continental Prestige Electronics

USA . 615,535 parts In-Stock

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$0.049

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RC Electronics

USA . 101,722 parts In-Stock

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$0.090

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$0.080

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USA . 80,000 parts In-Stock

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Kepictronics

USA . 16,000 parts In-Stock

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Eastek

USA . 16,000 parts In-Stock

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GreenTree Electronics

Israel . 16,000 parts In-Stock

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Kulean Microsystems

USA . 8,096 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Lixinc

USA . 7,404 parts In-Stock

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TANS Electronics

Latvia . 6,470 parts In-Stock

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SupplyDigital Components

Austria . 5,024 parts In-Stock

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Problanco Electronics

Mexico . 1,496 parts In-Stock

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UHIMA Technologies

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Overview

Discover the NSR0130P2T5G by Onsemi, a high-quality Schottky rectifier diode that offers exceptional performance in a compact package. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a variety of applications where efficiency and reliability are crucial. With a maximum operating temperature of 125°C and a minimum operating temperature of -55°C, this diode can withstand extreme conditions. Whether you're designing power supplies, battery chargers, or voltage converters, the NSR0130P2T5G provides unmatched value and benefits to meet your needs. Upgrade your projects with this top-of-the-line diode from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, making it suitable for various environments.

Surface Mount: YES

Surface mount capability allows for easy installation on printed circuit boards, saving space and simplifying the assembly process.

Max Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand demanding conditions without losing performance.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching characteristics, making them ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NSR0130P2T5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.385 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR0130P2T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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