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NSR0340HT1G

Onsemi

NSR0340HT1G by Onsemi

NSR0340HT1G by Onsemi is a Schottky rectifier diode with 40V reverse voltage, 0.25A output current, and 0.35V forward voltage. It operates b/w -55 to 150 °C and has a fast reverse recovery time of 0.005 us. Ideal for surface mount applications in electronics requiring high-speed switching capabilities.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 355 parts In-Stock

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$0.051

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355

$0.051

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$0.028

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DigiKey

USA . 62,352 parts In-Stock

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$0.100

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$0.057

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$0.100

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Mouser Electronics

USA . 40,918 parts In-Stock

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Newark

USA . 7,050 parts In-Stock

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Flip Electronics (Authorized)

USA . 783,000 parts In-Stock

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Verical

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Master Electronics

USA . 78,000 parts In-Stock

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Element14

Singapore . 34,979 parts In-Stock

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Farnell

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Chip1Stop

Japan . 15,000 parts In-Stock

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RS (Exports)

UK . 11,500 parts In-Stock

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Rochester

USA . 5,543 parts In-Stock

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$0.068

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Distributors (In-Stock)

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Digiode

USA . 850 parts In-Stock

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Ozdisan Elektronik

Türkiye . 2,943 parts In-Stock

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$0.030

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2,943

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TME

Poland . 670 parts In-Stock

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670

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Flip Electronics

USA . 636,000 parts In-Stock

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Component Sense

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Chip Stock

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Vyrian

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IBS Electronics

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NAC Semi

USA . 72,000 parts In-Stock

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ComSIT USA

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Cyclops Electronics Ltd

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Semtec, LLC

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Bristol Electronics

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Inventory MP

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Flex Direct, LLC

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Sensible Micro Corp

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Microfarads

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Lantek

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ACDS - Activité Composants Distribution Service

France . 519 parts In-Stock

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Semi Source

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Ampacity Inc.

Singapore . 103,091 parts In-Stock

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Semicontronic

India . 102,902 parts In-Stock

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Corphita

USA . 1,046 parts In-Stock

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Corohmni

South Africa . 37 parts In-Stock

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Argo Parts USA

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Advanced Electronics

New Zealand . 20 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,782 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 388,800 parts In-Stock

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GreenTree Electronics

Israel . 297,000 parts In-Stock

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RC Electronics

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Continental Prestige Electronics

USA . 52,065 parts In-Stock

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Lixinc

USA . 11,349 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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S.R.D Solutions

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 519 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Overview

Enhance your electronic designs with the NSR0340HT1G by Onsemi, a top-tier manufacturer known for delivering quality diodes and rectifiers. This Schottky technology-based rectifier diode offers high efficiency and reliability, making it ideal for a wide range of applications. With a maximum forward voltage of just 0.35V and a compact small outline package style, this diode is perfect for space-constrained projects where power efficiency is key. Trust Onsemi to provide you with cutting-edge technology that ensures your designs perform at their best. Choose the NSR0340HT1G for superior performance and value in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.005 us

The fast reverse recovery time ensures efficient operation and minimizes power loss in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand tough environmental conditions and high temperatures.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used for converting alternating current (AC) to direct current (DC), making this diode versatile and useful in various electronic devices.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drops and faster switching speeds compared to standard diodes, offering better efficiency and performance.

Technical Specifications

Diodes & Rectifiers NSR0340HT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.35 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.16 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR0340HT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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