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NSR0240V2T1G

Onsemi

NSR0240V2T1G by Onsemi

NSR0240V2T1G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage, 0.7V max forward voltage, and 0.003us reverse recovery time. It is used for efficiency applications due to its small outline package and high operating temperature range of -55 to 150°C.

Median Price

$0.164

Lifecycle Status

Suppliers In-Stock

28

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1k+

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Chip1Stop

Japan . 3,522 parts In-Stock

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Arrow

USA . 1,069 parts In-Stock

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DigiKey

USA . 2,374 parts In-Stock

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$0.094

$0.061

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Newark

USA . 865 parts In-Stock

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Future Electronics

Canada . 39,000 parts In-Stock

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Verical

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RS (Exports)

UK . 8,700 parts In-Stock

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Rochester

USA . 3,914 parts In-Stock

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$0.038

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Farnell

UK . 85 parts In-Stock

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Element14

Singapore . 85 parts In-Stock

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Digiode

USA . 1,844 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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TME

Poland . 3,159 parts In-Stock

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$0.068

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Freddi Giovanni

Italy . 66,000 parts In-Stock

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IBS Electronics

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Chip Stock

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Vyrian

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NAC Semi

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A&K Electronics

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Bristol Electronics

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Connect4Technologies Inc.

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Sensible Micro Corp

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Atlantic Semiconductor

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SPM Sales

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Prism Electronics

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Ampacity Inc.

Singapore . 38,797 parts In-Stock

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Semicontronic

India . 38,599 parts In-Stock

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Corphita

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Corohmni

South Africa . 275 parts In-Stock

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Argo Parts USA

USA . 4,883 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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Aztec Data Supply Inc.

USA . 776 parts In-Stock

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

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$0.077

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Authorized Procurement Solutions

USA . 2,199,000 parts In-Stock

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GreenTree Electronics

Israel . 2,151,000 parts In-Stock

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RC Electronics

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Kepictronics

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Lixinc

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SupplyDigital Components

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iodParts Technologies Inc.

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Kulean Microsystems

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Problanco Electronics

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Netroflash

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TANS Electronics

Latvia . 830 parts In-Stock

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UHIMA Technologies

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Formix International (Excess)

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Overview

Unlock the power of efficiency with the NSR0240V2T1G by Onsemi. As a leading manufacturer in diodes & rectifiers, Onsemi delivers top-quality products designed to optimize performance and reliability. Perfect for a wide range of applications, this Schottky rectifier diode offers fast reverse recovery time, low reverse current, and high temperature tolerance. With a maximum output current of 0.25 A and a peak repetitive reverse voltage of 40 V, this small outline package with dual terminals is a must-have for those seeking superior power management solutions. Experience the difference with Onsemi's NSR0240V2T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, suitable for various applications.

Config: SINGLE

Simplified design with one diode, easy to install and use.

Surface Mount: YES

Fits well on PCBs, saves space and allows for high-density mounting.

Maximum Reverse Recovery Time: 0.003 us

Efficient switching performance, reduces power losses.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop, improves energy efficiency.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensures proper current flow.

Technology: SCHOTTKY

Fast switching speed and low power loss characteristics.

Technical Specifications

Diodes & Rectifiers NSR0240V2T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.003 us

Reverse Test Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR0240V2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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