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NHPJ08S600G

Onsemi

NHPJ08S600G by Onsemi

NHPJ08S600G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and max output current of 8A. It is designed for high voltage ultra-fast recovery power applications, featuring a max repetitive peak reverse voltage of 600V and operating temperature range from -55 to 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Ampacity Inc.

Singapore . 491 parts In-Stock

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AZTECH Wire

Italy . 588 parts In-Stock

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Problanco Electronics

Mexico . 3,832 parts In-Stock

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SupplyDigital Components

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Corphita

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TANS Electronics

Latvia . 2,338 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 849 parts In-Stock

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Overview

Experience the next level of power efficiency and reliability with the NHPJ08S600G by Onsemi. As a leader in the industry, Onsemi delivers top-quality diodes and rectifiers that are perfect for high voltage ultra-fast recovery power applications. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 600V, this product offers unmatched performance and durability. Trust Onsemi for all your power needs and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, ensuring long-lasting performance.

Config: SINGLE

Simplified design with single configuration for easier installation and maintenance.

Maximum Reverse Recovery Time: 0.05 us

Ultra-fast recovery time ensures efficient operation and reduced power loss.

Maximum Reverse Current: 30 uA

Low reverse current minimizes power consumption and improves efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for space-saving installation in various applications.

No. of Terminals: 2

Simplified 2-terminal design for easy connection and integration.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure and stable mounting for reliable performance.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage applications requiring ultra-fast recovery power.

Maximum Operating Temperature: 150 °C

High maximum operating temperature for reliable performance in various environments.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for use in extreme conditions.

Terminal Finish: Tin (Sn)

Tin finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: SINGLE

Single terminal position for easier installation and connection.

Case Connection: ISOLATED

Isolated case connection for safety and protection against electrical hazards.

Diode Type: RECTIFIER DIODE

Rectifier diode design for efficient conversion of AC to DC power.

Maximum Forward Voltage (VF): 3.2 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 8 A

High output current rating for handling heavy loads and power requirements.

Technology: BLANK

Advanced technology for optimal performance and reliability.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for secure and stable connection in circuit boards.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating for handling high voltage applications.

Maximum Non Repetitive Peak Forward Current: 80 A

High peak forward current rating for handling surge currents and power spikes.

Diode Element Material: SILICON

Silicon diode element material for high performance and reliability in power applications.

Technical Specifications

Diodes & Rectifiers NHPJ08S600G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

BLANK

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NHPJ08S600G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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