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NHPJ15S600G

Onsemi

NHPJ15S600G by Onsemi

NHPJ15S600G by Onsemi is a single rectifier diode with 600V peak reverse voltage and 15A output current. It features a fast recovery time of 0.05us and low reverse current of 60uA, making it ideal for high voltage power applications. The diode operates b/w -55 to 150 °C and has a tin terminal finish in a rectangular flange mount package style.

Median Price

$0.679

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 215 parts In-Stock

1+ parts

-

100+ parts

$0.679

1k+ parts

$0.564

10k+ parts

$0.503

215

-

$0.679

$0.564

$0.503

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,855 parts In-Stock

1+ parts

$0.556

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1,855

$0.556

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Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Vyrian

USA . 4,462 parts In-Stock

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4,462

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Distributors (Availability)

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Corphita

USA . 1,898 parts In-Stock

1+ parts

$0.526

100+ parts

-

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1,898

$0.526

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Corohmni

South Africa . 375 parts In-Stock

1+ parts

$0.585

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375

$0.585

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AZTECH Wire

Italy . 1,086 parts In-Stock

1+ parts

$15.490

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1,086

$15.490

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TANS Electronics

Latvia . 5,505 parts In-Stock

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5,505

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Kulean Microsystems

USA . 4,710 parts In-Stock

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4,710

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Problanco Electronics

Mexico . 3,600 parts In-Stock

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3,600

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SupplyDigital Components

Austria . 3,156 parts In-Stock

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UHIMA Technologies

Türkiye . 499 parts In-Stock

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499

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Overview

Discover the cutting-edge NHPJ15S600G by Onsemi, a high-quality rectifier diode designed for high voltage ultra-fast recovery power applications. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 600V, this diode offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for their innovative technology and top-notch products, the NHPJ15S600G is sure to exceed your expectations. Whether you're working on power electronics or industrial applications, this diode will provide you with the value, benefits, and advantages you need to succeed. Elevate your projects with the NHPJ15S600G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Maximum Reverse Recovery Time: 0.05 us

The ultra-fast recovery time allows for efficient switching and operation in high voltage applications, improving overall performance.

Maximum Reverse Current: 60 uA

Low reverse current minimizes power loss and improves efficiency of the diode.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments, increasing versatility and suitability for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage rating, this diode can handle high voltage levels, making it ideal for high voltage applications.

Technical Specifications

Diodes & Rectifiers NHPJ15S600G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

60 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

BLANK

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NHPJ15S600G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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