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NRVB5100MFST3G

Onsemi

NRVB5100MFST3G by Onsemi

NRVB5100MFST3G by Onsemi is a Schottky rectifier diode with a max reverse current of 10uA and forward voltage of 0.98V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max repetitive peak reverse voltage of 100V and output current of 5A, it is ideal for various electronic circuits.

Median Price

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Lifecycle Status

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AZTECH Wire

Italy . 733 parts In-Stock

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TANS Electronics

Latvia . 4,516 parts In-Stock

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Kulean Microsystems

USA . 3,569 parts In-Stock

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Problanco Electronics

Mexico . 3,236 parts In-Stock

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iodParts Technologies Inc.

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SupplyDigital Components

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Corohmni

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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Overview

Discover the power of the NRVB5100MFST3G by Onsemi, a top-quality Schottky rectifier diode designed for efficiency in various applications. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 100V, this diode offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is sure to meet your needs with its small outline package style and dual terminal position. Whether you're working on automotive electronics or industrial equipment, the NRVB5100MFST3G provides the value and benefits you need for your projects to succeed. Experience the advantages of Onsemi quality today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Config: SINGLE

Simplified design with a single configuration, making it easier to implement in various applications.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 10 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape provides stability and ease of mounting in tight spaces.

No. of Terminals: 5

Sufficient number of terminals for connecting to the circuit, ensuring proper functionality.

Package Style (Meter): SMALL OUTLINE

Compact small outline package design saves space on the PCB and facilitates heat dissipation.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where power consumption needs to be optimized.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows the diode to perform reliably in various environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables the diode to function in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a stable and reliable terminal finish for secure connections.

Terminal Position: DUAL

Dual terminal position allows for versatile installation options in the circuit.

Case Connection: CATHODE

Clearly identified cathode connection for proper polarity alignment during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures quick and efficient soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables secure solder joints for reliable performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliable performance in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type suitable for converting AC to DC current, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.98 V

Low forward voltage drop minimizes power loss and increases efficiency in the circuit.

Maximum Output Current: 5 A

High output current rating allows the diode to handle higher load requirements.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds for improved efficiency.

Terminal Form: FLAT

Flat terminal form provides a stable connection and ease of soldering during installation.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating ensures reliable performance in applications with varying voltage levels.

Maximum Non Repetitive Peak Forward Current: 75 A

High non-repetitive peak forward current rating allows the diode to handle short-term power surges.

Diode Element Material: SILICON

Silicon diode element material offers high conductivity and temperature stability for reliable performance.

Technical Specifications

Diodes & Rectifiers NRVB5100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

10 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB5100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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