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NRVB0530T3G

Onsemi

NRVB0530T3G by Onsemi

NRVB0530T3G by Onsemi is a Schottky rectifier diode with a max repetitive peak reverse voltage of 30V and max output current of 0.5A. It is designed for applications requiring a small outline package, such as automotive electronics due to its AEC-Q101 reference standard compliance and operating temperature range from -65°C to 125°C.

Median Price

$0.070

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 39,600 parts In-Stock

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DigiKey

USA . 30,000 parts In-Stock

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$0.070

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$0.070

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Vyrian

USA . 39,201 parts In-Stock

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Flip Electronics

USA . 30,000 parts In-Stock

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Chip Stock

USA . 16,000 parts In-Stock

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Digiode

USA . 1,332 parts In-Stock

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Bristol Electronics

USA . 949 parts In-Stock

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Nova Conductors

Japan . 43 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,573 parts In-Stock

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$0.060

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$0.060

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Ampacity Inc.

Singapore . 39,434 parts In-Stock

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$0.442

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39,434

$0.442

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Semicontronic

India . 39,410 parts In-Stock

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$0.442

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$0.431

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$0.429

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$0.442

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Corohmni

South Africa . 205 parts In-Stock

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$0.520

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Kepictronics

USA . 72,540 parts In-Stock

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Metaverse IC Inc.

Canada . 66,540 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,170 parts In-Stock

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Problanco Electronics

Mexico . 6,966 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 1,800 parts In-Stock

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Argo Parts USA

USA . 1,115 parts In-Stock

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SupplyDigital Components

Austria . 828 parts In-Stock

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Kulean Microsystems

USA . 456 parts In-Stock

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Continental Prestige Electronics

USA . 358 parts In-Stock

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UHIMA Technologies

Türkiye . 347 parts In-Stock

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347

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Bastille Electronics

Australia . 300 parts In-Stock

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Corphita

USA . 58 parts In-Stock

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Overview

Discover the NRVB0530T3G by Onsemi, a high-quality Schottky rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With a maximum forward voltage of 0.375V and a maximum output current of 0.5A, this diode provides efficient power management in a compact package. Whether you're working on automotive electronics or industrial equipment, the NRVB0530T3G delivers value, benefits, and advantages that will exceed your expectations. Experience the difference with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode durable and resistant to impacts, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this diode can withstand elevated temperatures and operate reliably in various environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is suitable for converting alternating current (AC) to direct current (DC) efficiently and effectively.

Technology: SCHOTTKY

Utilizing Schottky technology results in lower forward voltage drop and faster switching, making this diode ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage of 30 V ensures reliable performance and protection against reverse voltage spikes in the circuit.

Technical Specifications

Diodes & Rectifiers NRVB0530T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.375 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB0530T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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