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MBR2045EMFST1G

Onsemi

MBR2045EMFST1G by Onsemi

MBR2045EMFST1G by Onsemi is a Schottky rectifier diode with 45V max repetitive peak reverse voltage, 20A max output current, and 0.64V max forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 150°C.

Median Price

$0.604

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 363 parts In-Stock

1+ parts

$0.604

100+ parts

$0.567

1k+ parts

$0.513

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363

$0.604

$0.567

$0.513

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Flip Electronics

USA . 1,259 parts In-Stock

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$0.400

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Digiode

USA . 2,262 parts In-Stock

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$0.574

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Chip Stock

USA . 28,000 parts In-Stock

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Vyrian

USA . 5,359 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.230

100+ parts

$0.209

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$0.189

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10

$0.230

$0.209

$0.189

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Corphita

USA . 1,813 parts In-Stock

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$0.544

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$0.544

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Corohmni

South Africa . 456 parts In-Stock

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$0.604

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456

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AZTECH Wire

Italy . 431 parts In-Stock

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$14.890

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431

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SupplyDigital Components

Austria . 7,549 parts In-Stock

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Kulean Microsystems

USA . 6,151 parts In-Stock

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TANS Electronics

Latvia . 6,004 parts In-Stock

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Problanco Electronics

Mexico . 2,740 parts In-Stock

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UHIMA Technologies

Türkiye . 475 parts In-Stock

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Kepictronics

USA . 105 parts In-Stock

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Overview

Discover the power of efficiency with the MBR2045EMFST1G by Onsemi. This top-quality diode offers unparalleled performance and reliability, thanks to Onsemi's reputation as a trusted manufacturer in the industry. Ideal for a wide range of applications, this rectifier diode delivers a maximum output current of 20A with a low forward voltage of 0.64V, ensuring optimal energy efficiency. Don't settle for anything less than the best - choose the MBR2045EMFST1G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the diode, making it suitable for different operating environments.

Config: SINGLE

Simplifies the circuit design and makes it easier to integrate into various electronic systems.

Surface Mount: YES

Facilitates easy installation on PCBs, saving time and effort during manufacturing.

Maximum Reverse Current: 400 uA

Low reverse current reduces power loss and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Provides a compact form factor that saves space in electronic devices.

No. of Terminals: 5

Sufficient terminals for connecting the diode securely in the circuit.

Package Style (Meter): SMALL OUTLINE

Compact size and outline make it suitable for space-constrained applications.

Application: EFFICIENCY

Designed for high efficiency applications where low power loss is critical.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in a wide range of environments.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation in extreme conditions.

Terminal Finish: MATTE TIN

Provides a reliable connection for improved performance and longevity.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Case Connection: CATHODE

Simplifies circuit configuration and ensures proper orientation during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Enhances the reliability of the diode during manufacturing processes.

Peak Reflow Temperature °C: 260

Capability to withstand high reflow temperatures during soldering process.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring reliable performance.

Maximum Forward Voltage (VF): 0.64 V

Low forward voltage drop leads to higher efficiency and reduced power loss.

Maximum Output Current: 20 A

Capable of handling high current loads in the circuit with efficiency.

Technology: SCHOTTKY

Schottky technology enhances the diode's performance with lower forward voltage drop and faster switching speed.

Terminal Form: FLAT

Flat terminals ensure easy and secure connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 45 V

Sufficient reverse voltage rating for various applications, ensuring protection against reverse current.

Maximum Non Repetitive Peak Forward Current: 400 A

Ability to handle high forward current surges, making it suitable for diverse applications.

Diode Element Material: SILICON

Silicon diode element material provides reliability and efficiency in rectification applications.

Technical Specifications

Diodes & Rectifiers MBR2045EMFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.64 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

400 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR2045EMFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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