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MBR2H200SFT1G

Onsemi

MBR2H200SFT1G by Onsemi

MBR2H200SFT1G by Onsemi is a Schottky rectifier diode with 200V reverse voltage, 2A output current, and 0.94V forward voltage. It is designed for power applications, operates b/w -55 to 150 °C, and features a small outline package suitable for surface mount technology.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 2,795 parts In-Stock

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$0.402

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Mouser Electronics

USA . 16,221 parts In-Stock

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$0.730

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$0.311

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$0.266

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DigiKey

USA . 11,387 parts In-Stock

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$0.890

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$0.357

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$0.246

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11,387

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Arrow

USA . 213,000 parts In-Stock

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Verical

USA . 213,000 parts In-Stock

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Avnet

USA . 120,000 parts In-Stock

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Rochester

USA . 72,000 parts In-Stock

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Farnell

UK . 51,880 parts In-Stock

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$0.166

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Element14

Singapore . 51,730 parts In-Stock

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Future Electronics

Canada . 21,000 parts In-Stock

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Master Electronics

USA . 17,250 parts In-Stock

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Chip1Stop

Japan . 10,590 parts In-Stock

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RS (Exports)

UK . 8,300 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

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$0.119

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Digiode

USA . 2,120 parts In-Stock

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Maritex

Poland . 5,590 parts In-Stock

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$0.665

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$0.163

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$0.117

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$0.099

5,590

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$0.163

$0.117

$0.099

Voyager Components

USA . 42 parts In-Stock

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Forefront Electronics and Design

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Flip Electronics

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IBS Electronics

USA . 159,000 parts In-Stock

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NAC Semi

USA . 156,000 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

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Electro Sonic

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Modulus Dynamics

Lithuania . 28,704 parts In-Stock

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Corohmni

South Africa . 220 parts In-Stock

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Argo Parts USA

USA . 4,441 parts In-Stock

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Continental Prestige Electronics

USA . 3,845 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Ampacity Inc.

Singapore . 96,498 parts In-Stock

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Semicontronic

India . 96,003 parts In-Stock

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Corphita

USA . 760 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,409 parts In-Stock

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Perfect Parts

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iodParts Technologies Inc.

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Lixinc

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Brazil . 9,509 parts In-Stock

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Lucentia Tech

USA . 9,509 parts In-Stock

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SupplyDigital Components

Austria . 8,058 parts In-Stock

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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Speed Components Ltd (Excess)

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Overview

Get ready to power up your electronics with the MBR2H200SFT1G from Onsemi! As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their diodes and rectifiers. Ideal for power applications, this Schottky rectifier diode offers a maximum output current of 2A and a maximum reverse voltage of 200V. With a compact rectangular package style and surface mount configuration, this diode is easy to install and perfect for a wide range of electronic devices. Trust Onsemi to deliver high-performance components that will take your projects to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficiency and reliability of the diode in preventing reverse flow of current.

Application: POWER

Designed for power applications, making it suitable for use in a wide range of power-related circuits.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering during manufacturing processes.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current (AC) to direct current (DC) efficiently.

Technical Specifications

Diodes & Rectifiers MBR2H200SFT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.94 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR2H200SFT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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