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MBR2H100SFT3G

Onsemi

MBR2H100SFT3G by Onsemi

MBR2H100SFT3G by Onsemi is a Schottky rectifier diode with 100V max repetitive peak reverse voltage and 2A max output current. It operates b/w -65 to 175°C, suitable for power applications. This single-configured diode has a small outline package style and matte tin terminal finish for surface mount assembly.

Median Price

$0.184

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 8,966 parts In-Stock

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$0.101

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$0.101

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$0.101

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8,966

$0.101

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Chip1Stop

Japan . 6,734 parts In-Stock

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$0.377

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$0.377

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DigiKey

USA . 89 parts In-Stock

1+ parts

$0.720

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$0.284

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$0.193

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$0.131

89

$0.720

$0.284

$0.193

$0.131

Mouser Electronics

USA . 2,869 parts In-Stock

1+ parts

$0.850

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$0.330

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$0.246

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2,869

$0.850

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Verical

USA . 110,000 parts In-Stock

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Future Electronics

Canada . 50,000 parts In-Stock

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RS (Exports)

UK . 39,960 parts In-Stock

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$0.184

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Farnell

UK . 35,845 parts In-Stock

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$0.259

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$0.142

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$0.141

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$0.141

Element14

Singapore . 35,845 parts In-Stock

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$0.256

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$0.149

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$0.146

35,845

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$0.146

Arrow

USA . 20,000 parts In-Stock

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Avnet

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Master Electronics

USA . 9,349 parts In-Stock

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9,349

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$0.098

Distributors (In-Stock)

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Digiode

USA . 1,767 parts In-Stock

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$0.102

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IBS Electronics

USA . 1,161,451 parts In-Stock

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$0.160

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$0.166

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$0.125

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$0.092

1,161,451

$0.160

$0.166

$0.125

$0.092

TME

Poland . 582 parts In-Stock

1+ parts

$0.530

100+ parts

$0.226

1k+ parts

$0.160

10k+ parts

$0.136

582

$0.530

$0.226

$0.160

$0.136

Maritex

Poland . 5,788 parts In-Stock

1+ parts

$0.761

100+ parts

$0.182

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$0.126

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$0.103

5,788

$0.761

$0.182

$0.126

$0.103

Nova Conductors

Japan . 550 parts In-Stock

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$1.000

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$1.000

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Chip Stock

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NAC Semi

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Vyrian

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Semtec, LLC

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HZD GmbH

Germany . 8,000 parts In-Stock

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Sensible Micro Corp

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Aztec Data Supply Inc.

USA . 3,610 parts In-Stock

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$0.040

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Ampacity Inc.

Singapore . 64,524 parts In-Stock

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$0.091

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Semicontronic

India . 59,675 parts In-Stock

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$0.091

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$0.089

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$0.088

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Corphita

USA . 2,147 parts In-Stock

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$0.096

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Corohmni

South Africa . 78 parts In-Stock

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Modulus Dynamics

Lithuania . 2,399 parts In-Stock

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Argo Parts USA

USA . 3,839 parts In-Stock

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$0.163

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$0.158

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$0.211

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$0.173

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Continental Prestige Electronics

USA . 28,256 parts In-Stock

1+ parts

$0.334

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$0.140

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$0.105

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$0.084

28,256

$0.334

$0.140

$0.105

$0.084

Component Stockers USA

USA . 940 parts In-Stock

1+ parts

$0.400

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$0.460

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$0.460

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$0.460

940

$0.400

$0.460

$0.460

$0.460

Netroflash

USA . 2,000 parts In-Stock

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$1.000

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$0.950

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$0.930

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$1.000

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RC Electronics

USA . 58,683 parts In-Stock

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Kepictronics

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Lixinc

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Robosynatics

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Lucentia Tech

USA . 7,623 parts In-Stock

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TANS Electronics

Latvia . 6,315 parts In-Stock

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iodParts Technologies Inc.

India . 6,258 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,301 parts In-Stock

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Problanco Electronics

Mexico . 4,967 parts In-Stock

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Kulean Microsystems

USA . 4,276 parts In-Stock

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Futuretech Components

Singapore . 4,000 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

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GreenTree Electronics

Israel . 705 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 168 parts In-Stock

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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Overview

Unleash the power of Onsemi's MBR2H100SFT3G diode, a high-quality product that offers unmatched performance in power applications. With a maximum output current of 2A and a maximum repetitive peak reverse voltage of 100V, this Schottky diode is a game-changer in the industry. Its innovative technology ensures efficient power conversion and reliable operation in extreme conditions. Trust Onsemi for excellence in diodes & rectifiers, and experience the difference with the MBR2H100SFT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Current: 40 uA

Low reverse current ensures efficient energy usage and minimal power loss.

Application: POWER

Suitable for power applications, providing reliable performance under high voltage conditions.

Maximum Operating Temperature: 175 °C

Can operate effectively at high temperatures, making it versatile for various environments.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching capabilities, ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBR2H100SFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

40 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR2H100SFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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