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MBR560MFST1G

Onsemi

MBR560MFST1G by Onsemi

MBR560MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and forward voltage of 0.78V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max reverse voltage of 60V and non-repetitive forward current of 100A, it offers reliable performance in various electronic circuits.

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AZTECH Wire

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Component Stockers USA

USA . 583 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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A-Z Elektronik GmbH

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Kulean Microsystems

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UHIMA Technologies

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Overview

Experience the superior quality and reliability of the Onsemi MBR560MFST1G diode rectifier. As a trusted manufacturer in the industry, Onsemi delivers top-notch products that are designed for efficiency and performance. This small outline package with matte tin terminal finish offers a maximum output current of 5A and a maximum repetitive peak reverse voltage of 60V, making it ideal for various applications. Trust Onsemi to provide you with a high-quality solution that will meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and transport.

Config: SINGLE

Single configuration simplifies the setup and installation process, making it more user-friendly.

Surface Mount: YES

Surface mount capability allows for easy and secure attachment to circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 150 uA

Low maximum reverse current ensures efficient operation and minimizes power loss.

Package Shape: RECTANGULAR

Rectangular shape offers a compact design, ideal for applications with limited space.

No. of Terminals: 5

Having 5 terminals provides flexibility in connection options and allows for versatile use in different circuit layouts.

Package Style (Meter): SMALL OUTLINE

Small outline package style is space-saving and facilitates efficient heat dissipation, improving overall performance.

Application: EFFICIENCY

Designed for efficiency, this product is suitable for applications where energy conservation is important.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and corrosion-resistant connection for long-lasting performance.

Terminal Position: DUAL

Dual terminal position enhances connectivity options and allows for versatile mounting orientations.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures proper polarity during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures fast and efficient soldering, minimizing assembly time.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for secure and reliable solder joints during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC, making it versatile for a wide range of applications.

Maximum Forward Voltage (VF): 0.78 V

Low maximum forward voltage ensures efficient power conversion and minimal energy loss.

Maximum Output Current: 5 A

High maximum output current capability supports demanding applications with heavy load requirements.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, enhancing overall efficiency.

Terminal Form: FLAT

Flat terminal form ensures easy and secure connections during assembly, promoting reliable performance.

Maximum Repetitive Peak Reverse Voltage: 60 V

Maximum repetitive peak reverse voltage rating ensures reliable operation under varying voltage conditions.

Maximum Non Repetitive Peak Forward Current: 100 A

High maximum non-repetitive peak forward current capability supports transient surges without damage to the diode.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and high efficiency in various operating conditions.

Technical Specifications

Diodes & Rectifiers MBR560MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.78 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

150 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR560MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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