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MBR5025L

Onsemi

MBR5025L by Onsemi

The Onsemi MBR5025L is a Schottky rectifier diode with a max output current of 50A and a max repetitive peak reverse voltage of 25V. It is designed for power applications, featuring a package style of flange mount and operating temperature up to 150 °C. Ideal for high-power circuits requiring low forward voltage drop (0.65V) and high non-repetitive peak forward current (300A).

Median Price

$1.030

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 265 parts In-Stock

1+ parts

-

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$1.030

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$0.855

10k+ parts

$0.762

265

-

$1.030

$0.855

$0.762

Distributors (In-Stock)

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Digiode

USA . 1,560 parts In-Stock

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$0.803

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1,560

$0.803

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American Microsemiconductor Inc.

USA . 60 parts In-Stock

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$5.950

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60

$5.950

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Vyrian

USA . 3,769 parts In-Stock

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ECAB

Sweden . 16 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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Corphita

USA . 324 parts In-Stock

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$0.760

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324

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Corohmni

South Africa . 372 parts In-Stock

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$0.845

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372

$0.845

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Microchip USA

USA . 341 parts In-Stock

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$5.265

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341

$5.265

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TANS Electronics

Latvia . 5,332 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,505 parts In-Stock

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Kulean Microsystems

USA . 4,222 parts In-Stock

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Problanco Electronics

Mexico . 3,346 parts In-Stock

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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SupplyDigital Components

Austria . 401 parts In-Stock

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Unlock the power of reliable performance with the MBR5025L by Onsemi. As a trusted manufacturer in the industry, Onsemi's diodes and rectifiers are known for their high-quality construction and superior efficiency. The MBR5025L is designed for power applications, offering customers a robust solution that delivers exceptional value and benefits. With a maximum output current of 50 A and a maximum repetitive peak reverse voltage of 25 V, this Schottky rectifier diode provides the performance you need for your projects. Trust Onsemi for quality components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Application: POWER

Suitable for power applications, offering efficient and effective performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of operating conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop resulting in minimal power loss and efficient operation.

Maximum Output Current: 50 A

High output current capability suitable for a wide range of power applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speed and low forward voltage drop.

Maximum Repetitive Peak Reverse Voltage: 25 V

Able to handle high reverse voltages, providing protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 300 A

Can handle short-term peak currents, offering protection against surges.

Diode Element Material: SILICON

Silicon diode material provides reliable performance and durability.

Technical Specifications

Diodes & Rectifiers MBR5025L attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

50 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

25 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBR5025L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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