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MBR5100MFST3G

Onsemi

MBR5100MFST3G by Onsemi

MBR5100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 5A output current, and 0.98V forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 175°C. This single-configured diode has a small outline package with matte tin finish and dual terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,802 parts In-Stock

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Digiode

USA . 1,368 parts In-Stock

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AZTECH Wire

Italy . 1,208 parts In-Stock

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$14.990

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Component Stockers USA

USA . 454 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 8,028 parts In-Stock

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SupplyDigital Components

Austria . 7,392 parts In-Stock

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Problanco Electronics

Mexico . 3,891 parts In-Stock

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Kulean Microsystems

USA . 3,316 parts In-Stock

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Corphita

USA . 1,318 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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Corohmni

South Africa . 305 parts In-Stock

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Overview

Enhance the efficiency of your electronic devices with the MBR5100MFST3G diode rectifier by Onsemi. With a maximum output current of 5A and a Schottky technology design, this product offers optimal performance in various applications. The manufacturer's reputation for quality and reliability ensures that you are getting a top-notch product that will exceed your expectations. Upgrade your electronic circuits with this high-value component and experience the benefits of improved efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and size are important factors.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss and high efficiency in the operation of the diode.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh operating conditions without degradation in performance.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop and faster switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBR5100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

10 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR5100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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