Loading...

MBR540MFST1G

Onsemi

MBR540MFST1G by Onsemi

MBR540MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and a max repetitive peak reverse voltage of 40V. It operates efficiently with an operating temperature range from -40°C to 175°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. The diode's small outline package style, matte tin terminal finish, and dual terminal position make it ideal for surface mount applications.

Median Price

$0.224

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,969 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.185

10k+ parts

$0.165

2,969

-

$0.224

$0.185

$0.165

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 230 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

10k+ parts

-

230

$0.174

-

-

-

Flip Electronics

USA . 31,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

31,500

-

-

-

-

Vyrian

USA . 6,421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,421

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,203 parts In-Stock

1+ parts

$0.165

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

$0.165

-

-

-

Corohmni

South Africa . 138 parts In-Stock

1+ parts

$0.183

100+ parts

-

1k+ parts

-

10k+ parts

-

138

$0.183

-

-

-

Component Stockers USA

USA . 7,079 parts In-Stock

1+ parts

$0.190

100+ parts

$0.180

1k+ parts

$0.160

10k+ parts

-

7,079

$0.190

$0.180

$0.160

-

AZTECH Wire

Italy . 1,139 parts In-Stock

1+ parts

$15.120

100+ parts

-

1k+ parts

-

10k+ parts

-

1,139

$15.120

-

-

-

Kulean Microsystems

USA . 7,808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,808

-

-

-

-

SupplyDigital Components

Austria . 2,848 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,848

-

-

-

-

Problanco Electronics

Mexico . 954 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

954

-

-

-

-

UHIMA Technologies

Türkiye . 119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

119

-

-

-

-

TANS Electronics

Latvia . 86 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

86

-

-

-

-

Overview

Unlock a new level of efficiency with the MBR540MFST1G by Onsemi. This high-quality rectifier diode offers unmatched performance, reliability, and value for a wide range of applications. With a maximum output current of 5A and a maximum forward voltage of 0.58V, this Schottky diode is perfect for enhancing power conversion efficiency. Whether you're designing power supplies, voltage regulators, or battery chargers, trust Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the MBR540MFST1G and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Easily attachable to circuit boards, making installation simpler and more efficient.

Maximum Reverse Current: 2000 uA

Provides a high reverse current rating, allowing for efficient performance under various conditions.

Package Style (Meter): SMALL OUTLINE

Compact design saves space and is suitable for applications with limited room.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, making it suitable for demanding environments.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, ideal for high efficiency applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

Can withstand high reverse voltages, ensuring reliable performance in a variety of circuits.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and performance, making this diode a trusted choice.

Technical Specifications

Diodes & Rectifiers MBR540MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

2000 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR540MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19