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MBR5100MFST1G

Onsemi

MBR5100MFST1G by Onsemi

MBR5100MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and max reverse voltage of 100V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This single-configured diode has a small outline package style and matte tin terminal finish for surface mount assembly.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,636 parts In-Stock

1+ parts

-

100+ parts

$0.240

1k+ parts

$0.199

10k+ parts

$0.177

2,636

-

$0.240

$0.199

$0.177

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,478 parts In-Stock

1+ parts

$0.187

100+ parts

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1,478

$0.187

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Vyrian

USA . 3,911 parts In-Stock

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3,911

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Speed Components Ltd

Israel . 100 parts In-Stock

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100

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Distributors (Availability)

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Corphita

USA . 349 parts In-Stock

1+ parts

$0.177

100+ parts

-

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349

$0.177

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Corohmni

South Africa . 50 parts In-Stock

1+ parts

$0.197

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50

$0.197

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AZTECH Wire

Italy . 939 parts In-Stock

1+ parts

$21.030

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939

$21.030

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SupplyDigital Components

Austria . 8,220 parts In-Stock

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8,220

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Kulean Microsystems

USA . 7,170 parts In-Stock

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7,170

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A-Z Elektronik GmbH

Germany . 6,551 parts In-Stock

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6,551

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TANS Electronics

Latvia . 6,434 parts In-Stock

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6,434

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Perfect Parts

USA . 3,293 parts In-Stock

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3,293

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Problanco Electronics

Mexico . 2,329 parts In-Stock

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2,329

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UHIMA Technologies

Türkiye . 665 parts In-Stock

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665

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Assy Fe

Spain . 10 parts In-Stock

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10

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Overview

Experience superior quality and performance with the MBR5100MFST1G diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch products like this one, perfect for applications requiring high efficiency and reliability. With its Schottky technology and maximum output current of 5A, this diode offers unmatched value and benefits to customers, ensuring optimal functionality in a variety of electronic systems. Upgrade your projects with the MBR5100MFST1G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the diode, making it suitable for various applications.

Surface Mount: YES

The ability for surface mount installation makes this diode easily integrated into circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Current: 10 uA

Low maximum reverse current ensures efficient performance and helps in minimizing power losses across the diode.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this diode to function reliably under various environmental conditions.

Technology: SCHOTTKY

The Schottky diode technology offers fast switching performance and low forward voltage drop, making this diode suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBR5100MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

10 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR5100MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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