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MBR5200VPBTR-E1

Diodes Incorporated

MBR5200VPBTR-E1 by Diodes Incorporated

MBR5200VPBTR-E1 by Diodes Inc. is a Schottky rectifier diode with 200V reverse voltage, 5A output current, and 0.95V forward voltage. It is designed for high voltage power applications, featuring a max operating temperature of 150°C and min of -65°C. The diode has an isolated case connection, matte tin terminal finish, and wire terminal form for efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 18,500 parts In-Stock

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18,500

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Vyrian

USA . 7,753 parts In-Stock

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7,753

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Nova Conductors

Japan . 55 parts In-Stock

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55

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 615 parts In-Stock

1+ parts

$2.010

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615

$2.010

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AZTECH Wire

Italy . 294 parts In-Stock

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$18.016

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294

$18.016

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Lixinc

USA . 1,827 parts In-Stock

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1,827

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Argo Parts USA

USA . 1,400 parts In-Stock

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1,400

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Continental Prestige Electronics

USA . 684 parts In-Stock

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684

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Overview

Upgrade your high voltage power applications with the MBR5200VPBTR-E1 by Diodes Incorporated. Known for their exceptional quality and reliability, Diodes Incorporated offers a wide range of diodes and rectifiers designed to meet the demands of modern technology. The MBR5200VPBTR-E1, with its Schottky technology and maximum repetitive peak reverse voltage of 200V, provides superior performance and efficiency. Trust Diodes Incorporated to deliver the solutions you need for your critical power applications. Unlock the potential of your projects with the MBR5200VPBTR-E1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Maximum Reverse Current: 500 uA

Low reverse current helps in minimizing power losses and improving efficiency.

Application: HIGH VOLTAGE POWER

Suitable for high voltage power applications, ensuring reliable performance under demanding conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, making it suitable for a variety of environments.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard diodes, improving overall efficiency.

Technical Specifications

Diodes & Rectifiers MBR5200VPBTR-E1 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW NOISE

Application:

HIGH VOLTAGE POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JEDEC-95 Code:

DO-27

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

500 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR5200VPBTR-E1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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