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MBR140ESFT3G

Onsemi

MBR140ESFT3G by Onsemi

The Onsemi MBR140ESFT3G is a Schottky rectifier diode with a max forward voltage of 0.51V and output current of 1A. With a repetitive peak reverse voltage of 40V, it is ideal for applications requiring high-speed switching in electronics. This surface-mount diode operates at temperatures up to 175°C, making it suitable for various industrial and automotive applications.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.106

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Vyrian

USA . 5,402 parts In-Stock

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Digiode

USA . 2,414 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,017 parts In-Stock

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$0.010

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Corohmni

South Africa . 199 parts In-Stock

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$0.102

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Aranea Global

USA . 2,000 parts In-Stock

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$0.104

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Continental Prestige Electronics

USA . 2,931 parts In-Stock

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$0.104

2,931

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Argo Parts USA

USA . 2,003 parts In-Stock

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$0.106

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$0.103

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AZTECH Wire

Italy . 762 parts In-Stock

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$18.062

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762

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Problanco Electronics

Mexico . 4,039 parts In-Stock

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SupplyDigital Components

Austria . 1,835 parts In-Stock

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Corphita

USA . 1,825 parts In-Stock

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TANS Electronics

Latvia . 953 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Kulean Microsystems

USA . 424 parts In-Stock

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Perfect Parts

USA . 56 parts In-Stock

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Overview

Discover the exceptional quality and performance of the MBR140ESFT3G diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient products that exceed expectations. Ideal for a wide range of applications, this Schottky rectifier diode offers unmatched value with its high output current, low forward voltage, and superior technology. Experience the benefits of precision engineering and top-notch materials with the MBR140ESFT3G, setting new standards in diode technology.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the product simple and easy to use for various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and stability under varying conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-lasting performance.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature helps in preventing damage to the diode during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and durability of the diode.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC with low forward voltage drop.

Maximum Forward Voltage (VF): 0.51 V

Low forward voltage drop results in minimum power loss and high efficiency in the circuit.

Maximum Output Current: 1 A

High maximum output current rating allows for handling larger loads and circuits.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low reverse leakage for improved performance.

Maximum Repetitive Peak Reverse Voltage: 40 V

High repetitive peak reverse voltage rating ensures protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 30 A

High non-repetitive peak forward current rating allows for handling short-duration current surges without damage.

Diode Element Material: SILICON

Silicon diode element material offers good thermal conductivity and high reliability for wide temperature range operation.

Technical Specifications

Diodes & Rectifiers MBR140ESFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.51 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR140ESFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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