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NHPV15S600G

Onsemi

NHPV15S600G by Onsemi

NHPV15S600G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.05 us and a max output current of 15 A. It is designed for high voltage ultra-fast recovery power applications, featuring a max repetitive peak reverse voltage of 600 V and operating temperatures ranging from -55 to 150 °C.

Median Price

$0.970

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 529 parts In-Stock

1+ parts

$2.000

100+ parts

$1.310

1k+ parts

$1.110

10k+ parts

$0.866

529

$2.000

$1.310

$1.110

$0.866

Rochester

USA . 20,157 parts In-Stock

1+ parts

-

100+ parts

$0.849

1k+ parts

$0.705

10k+ parts

$0.628

20,157

-

$0.849

$0.705

$0.628

DigiKey

USA . 20,157 parts In-Stock

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$1.060

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$1.060

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Verical

USA . 18,407 parts In-Stock

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$0.881

10k+ parts

$0.785

18,407

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-

$0.881

$0.785

Distributors (In-Stock)

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Digiode

USA . 2,048 parts In-Stock

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$0.928

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2,048

$0.928

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Chip Stock

USA . 56,000 parts In-Stock

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Vyrian

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Distributors (Availability)

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Corphita

USA . 946 parts In-Stock

1+ parts

$0.879

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946

$0.879

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Corohmni

South Africa . 282 parts In-Stock

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$0.977

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282

$0.977

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Continental Prestige Electronics

USA . 20,300 parts In-Stock

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$0.960

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$0.960

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Microchip USA

USA . 9,402 parts In-Stock

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TANS Electronics

Latvia . 8,393 parts In-Stock

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Problanco Electronics

Mexico . 7,489 parts In-Stock

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SupplyDigital Components

Austria . 3,911 parts In-Stock

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Kulean Microsystems

USA . 2,594 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 247 parts In-Stock

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Kepictronics

USA . 60 parts In-Stock

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Overview

Discover the NHPV15S600G by Onsemi, a high-quality diode perfect for high voltage ultra-fast recovery power applications. Manufactured by Onsemi, a trusted leader in the industry, this single-configured diode offers exceptional performance and reliability. With a maximum reverse recovery time of 0.05us and a maximum output current of 15A, this diode is designed to meet your power needs efficiently. Whether you're working on industrial or electronic projects, the NHPV15S600G provides value, benefits, and advantages that will take your designs to the next level. Choose Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical protection and insulation, making the diode durable and reliable for long-term use.

Maximum Reverse Recovery Time: 0.05 us

Ultra-fast recovery time ensures efficient switching performance and reduces power losses in high voltage applications.

Maximum Reverse Current: 60 uA

Low reverse current minimizes leakage and improves the overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in demanding environments without compromising performance.

Maximum Output Current: 15 A

High output current rating makes this diode suitable for power applications requiring high current handling capabilities.

Technical Specifications

Diodes & Rectifiers NHPV15S600G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

60 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

BLANK

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NHPV15S600G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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