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NRVB5H100MFST1G

Onsemi

NRVB5H100MFST1G by Onsemi

NRVB5H100MFST1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.73V and a max output current of 5A. It is designed for efficiency applications, has a max operating temperature of 175°C, and can handle a max repetitive peak reverse voltage of 100V.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.386

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10

$0.386

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Chip Stock

USA . 20,000 parts In-Stock

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Vyrian

USA . 4,173 parts In-Stock

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Digiode

USA . 2,128 parts In-Stock

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2,128

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,135 parts In-Stock

1+ parts

$0.090

100+ parts

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3,135

$0.090

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Corohmni

South Africa . 214 parts In-Stock

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$0.378

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214

$0.378

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.386

100+ parts

$0.367

1k+ parts

$0.348

10k+ parts

$0.344

100

$0.386

$0.367

$0.348

$0.344

Continental Prestige Electronics

USA . 4,666 parts In-Stock

1+ parts

$0.386

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$0.378

4,666

$0.386

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$0.378

Argo Parts USA

USA . 255 parts In-Stock

1+ parts

$0.386

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$0.374

255

$0.386

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$0.374

Ampacity Inc.

Singapore . 154 parts In-Stock

1+ parts

$1.010

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154

$1.010

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Semicontronic

India . 297 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

1k+ parts

$2.920

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297

$3.010

$2.935

$2.920

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AZTECH Wire

Italy . 572 parts In-Stock

1+ parts

$10.804

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572

$10.804

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Problanco Electronics

Mexico . 7,816 parts In-Stock

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SupplyDigital Components

Austria . 5,984 parts In-Stock

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TANS Electronics

Latvia . 5,117 parts In-Stock

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Kulean Microsystems

USA . 2,320 parts In-Stock

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Corphita

USA . 1,812 parts In-Stock

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1,812

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UHIMA Technologies

Türkiye . 752 parts In-Stock

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752

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Overview

Discover the NRVB5H100MFST1G by Onsemi, a high-quality rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is designed for efficiency and delivers outstanding results in a wide range of applications. With a maximum forward voltage of 0.73V and a maximum output current of 5A, this Schottky diode provides superior functionality and power. Whether you're working on automotive electronics or industrial equipment, the NRVB5H100MFST1G is the perfect choice. Experience the value, benefits, and advantages that this product offers to customers - order yours today and unlock a world of possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable, which is ideal for applications where weight and size are important factors.

Config: SINGLE

The single configuration simplifies the circuit design and makes the diode easy to integrate into different types of electronic devices.

Maximum Reverse Current: 100 uA

The low maximum reverse current ensures minimal power loss and efficient operation of the diode.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, making the diode suitable for high-frequency applications where efficiency is crucial.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without any performance degradation, ensuring reliability in harsh environments.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and enables compact designs, making it suitable for applications with size constraints.

Technical Specifications

Diodes & Rectifiers NRVB5H100MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.73 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVB5H100MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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