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MBRAF1540T3G

Onsemi

MBRAF1540T3G by Onsemi

MBRAF1540T3G by Onsemi is a Schottky rectifier diode with a max output current of 1.5A and a max repetitive peak reverse voltage of 40V. It is designed for power applications, operates b/w -55 to 150 °C, and features a small outline package style suitable for surface mount assembly.

Median Price

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Lifecycle Status

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Chip Stock

USA . 32,582 parts In-Stock

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USA . 4,690 parts In-Stock

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USA . 2,909 parts In-Stock

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AZTECH Wire

Italy . 65 parts In-Stock

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Component Stockers USA

USA . 342 parts In-Stock

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$99.990

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Kepictronics

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Perfect Parts

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Overview

Experience the exceptional quality and reliability of the MBRAF1540T3G by Onsemi. As a leading manufacturer in the industry, Onsemi is known for producing top-notch diodes and rectifiers that meet the highest standards. This powerful Schottky diode offers incredible performance for power applications, with a maximum output current of 1.5 A and a maximum repetitive peak reverse voltage of 40 V. Its compact design makes it ideal for surface mount applications, and its dual terminal position ensures easy installation. Trust in the MBRAF1540T3G to deliver superior efficiency and durability for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode durable and resistant to environmental factors, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies the design and installation process, making it a convenient choice for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation on PCBs, saving space and enhancing the overall efficiency of the circuit.

Maximum Reverse Current: 800 uA

With a low maximum reverse current, this diode offers efficient performance in preventing reverse flow of current, making it suitable for power applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a stable and compact design, making it suitable for tight spaces and ensuring easy integration into circuit designs.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and ensures proper polarity, making it user-friendly for both professionals and hobbyists.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for more components to be added, making it a practical choice for power applications.

Application: POWER

Designed for power applications, this diode can handle higher currents and voltages efficiently, making it a reliable choice for various power-related projects.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures, ensuring stability and reliability in harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the diode to function effectively in cold conditions, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin finish provides a stable and reliable connection, ensuring good conductivity and preventing corrosion, contributing to the diode's longevity.

Terminal Position: DUAL

The dual terminal position simplifies the installation process, ensuring proper alignment and polarity, making it user-friendly for installation and maintenance.

Maximum Time At Peak Reflow Temperature (s): 30

With a short time at peak reflow temperature, the diode can be easily integrated into automated assembly processes, saving time and effort during manufacturing.

Peak Reflow Temperature °C: 260

The high peak reflow temperature indicates the diode's ability to withstand soldering processes without damage, ensuring reliable connections on the PCB.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed to efficiently convert AC to DC, making it ideal for power supply and rectification circuits.

Maximum Forward Voltage (VF): 0.54 V

With a low maximum forward voltage, this diode has minimal voltage drop, ensuring efficient power transmission and minimizing energy loss.

Maximum Output Current: 1.5 A

Capable of handling a maximum output current of 1.5 A, this diode is suitable for medium-power applications, providing reliable performance under load.

Technology: SCHOTTKY

The Schottky technology used in this diode offers lower forward voltage drop and faster switching speeds, enhancing overall efficiency and performance.

Terminal Form: FLAT

The flat terminal form ensures easy and secure connections, facilitating the installation process and ensuring proper contact for efficient operation.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a maximum repetitive peak reverse voltage of 40 V, this diode can handle moderate voltage levels, making it suitable for various power-related applications.

Maximum Non Repetitive Peak Forward Current: 40 A

Capable of handling a maximum non-repetitive peak forward current of 40 A, this diode can withstand short-term overloads, ensuring reliability in transient conditions.

Diode Element Material: SILICON

Made of silicon, a widely used semiconductor material, this diode offers good electrical properties and thermal stability, ensuring reliable performance in various applications.

Technical Specifications

Diodes & Rectifiers MBRAF1540T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.54 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

800 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRAF1540T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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