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MBR460MFST3G

Onsemi

MBR460MFST3G by Onsemi

MBR460MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.74V. It operates efficiently at temperatures ranging from -55 to 175 °C, making it suitable for various applications requiring high-speed switching and low power loss in compact designs.

Median Price

$0.198

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.212

1k+ parts

$0.176

10k+ parts

$0.157

10,000

-

$0.212

$0.176

$0.157

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.184

10,000

-

-

-

$0.184

Distributors (In-Stock)

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Digiode

USA . 384 parts In-Stock

1+ parts

$0.165

100+ parts

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384

$0.165

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Vyrian

USA . 10,240 parts In-Stock

1+ parts

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10,240

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Flip Electronics

USA . 10,000 parts In-Stock

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10,000

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Distributors (Availability)

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Corphita

USA . 1,417 parts In-Stock

1+ parts

$0.157

100+ parts

-

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1,417

$0.157

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Corohmni

South Africa . 266 parts In-Stock

1+ parts

$0.174

100+ parts

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266

$0.174

-

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AZTECH Wire

Italy . 736 parts In-Stock

1+ parts

$20.970

100+ parts

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736

$20.970

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QUARKTWIN TECHNOLOGY LTD

USA . 23,593 parts In-Stock

1+ parts

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23,593

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Problanco Electronics

Mexico . 8,370 parts In-Stock

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8,370

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TANS Electronics

Latvia . 7,954 parts In-Stock

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7,954

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Kulean Microsystems

USA . 1,093 parts In-Stock

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1,093

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SupplyDigital Components

Austria . 922 parts In-Stock

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922

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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134

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Microchip USA

USA . 100 parts In-Stock

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100

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Overview

Experience the superior quality and performance of the Onsemi MBR460MFST3G diode rectifier. Manufactured by industry leader Onsemi, this product is designed for maximum efficiency in a variety of applications. With a small outline package style and dual terminal position, this diode offers a reliable solution for your electronic needs. From its matte tin terminal finish to its Schottky technology, the MBR460MFST3G provides customers with a valuable and high-quality component that delivers on both performance and durability. Elevate your projects with the Onsemi MBR460MFST3G diode rectifier today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a long lifespan.

Configuration: SINGLE

Simplifies the circuit design and reduces complexity.

Surface Mount: YES

Allows for easy mounting on PCBs, saving space and simplifying assembly.

Maximum Reverse Current: 200 uA

Efficiently blocks current in the reverse direction, ensuring reliable performance.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the PCB.

No. of Terminals: 5

Provides multiple connection points for flexible integration into the circuit.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB.

Application: EFFICIENCY

Designed for high efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can operate under high temperature conditions without compromising performance.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold conditions, making it versatile for various environments.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant finish for long-term use.

Terminal Position: DUAL

Allows for flexibility in wiring and connection options.

Case Connection: CATHODE

Clearly defines the polarity for easy installation.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for soldering without damage.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.74 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 4 A

Capable of handling high current loads for various applications.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching speed, ideal for high frequency applications.

Terminal Form: FLAT

Flat terminals make soldering and connection easier and more reliable.

Maximum Repetitive Peak Reverse Voltage: 60 V

Suitable for applications requiring voltage rectification up to 60V.

Maximum Non Repetitive Peak Forward Current: 40 A

Capable of handling high peak currents for short durations, making it suitable for transient protection.

Diode Element Material: SILICON

Silicon is a common and reliable material for diodes, ensuring stable performance.

Technical Specifications

Diodes & Rectifiers MBR460MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR460MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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