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MBR1045MFST3G

Onsemi

MBR1045MFST3G by Onsemi

MBR1045MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a surface-mount package style for easy installation.

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Lifecycle Status

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1k+

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Vyrian

USA . 10,615 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 35 parts In-Stock

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$21.390

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Component Stockers USA

USA . 280 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,758 parts In-Stock

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Kulean Microsystems

USA . 6,376 parts In-Stock

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TANS Electronics

Latvia . 6,247 parts In-Stock

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Problanco Electronics

Mexico . 3,555 parts In-Stock

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Corphita

USA . 1,836 parts In-Stock

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UHIMA Technologies

Türkiye . 727 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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SupplyDigital Components

Austria . 221 parts In-Stock

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Overview

Enhance the efficiency of your electronic applications with the MBR1045MFST3G by Onsemi. Crafted with precision and expertise, this high-quality Schottky rectifier diode offers a maximum output current of 10 A and a maximum forward voltage of 0.75 V, providing exceptional performance in a compact package. Perfect for a wide range of applications requiring high efficiency, the MBR1045MFST3G is a reliable choice that delivers value and benefits to customers looking for top-notch quality in their electronics components. Upgrade your designs with Onsemi's trusted technology and experience the advantages firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring reliability and long-lasting performance.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to incorporate into various electronic applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 500 uA

With a low maximum reverse current, this diode offers efficient performance and minimizes power loss in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package enables compact placement on the PCB, optimizing space utilization in electronic devices.

No. of Terminals: 5

Having five terminals provides flexible connectivity options, allowing for versatile integration into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the overall footprint of the diode, making it suitable for applications with space constraints.

Application: EFFICIENCY

Designed for efficiency, this diode ensures minimal energy wastage and improved performance in power conversion applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for reliable operation in various environments without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range ensures functionality even in cold conditions, making it suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides a durable and corrosion-resistant coating for the terminals, ensuring long-term reliability.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in the installation and connection of the diode, making it easier to integrate into different circuit layouts.

Case Connection: CATHODE

The cathode case connection ensures proper polarity alignment and easy identification during installation, reducing the risk of circuit errors.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time at peak temperature ensures efficient and reliable soldering during the manufacturing process, leading to consistent quality.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this diode can withstand the soldering process without deformation or damage, ensuring mechanical robustness.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC and ensures smooth power flow in electronic circuits.

Maximum Forward Voltage (VF): 0.75 V

The low forward voltage drop of 0.75V ensures efficient power conversion and minimal voltage loss across the diode, improving overall circuit performance.

Maximum Output Current: 10 A

With a high maximum output current rating of 10A, this diode can handle heavy loads and deliver reliable power output in various applications.

Technology: SCHOTTKY

Using Schottky technology results in faster switching speeds, lower forward voltage drop, and higher efficiency compared to conventional diodes.

Terminal Form: FLAT

The flat terminal form simplifies the soldering process and ensures secure connections, contributing to overall reliability and ease of installation.

Maximum Repetitive Peak Reverse Voltage: 45 V

The high repetitive peak reverse voltage rating of 45V provides ample protection against reverse voltage spikes and ensures robust performance in different applications.

Maximum Non Repetitive Peak Forward Current: 150 A

With a high non-repetitive peak forward current capacity of 150A, this diode can withstand short-term overloads and transient surges without damage, ensuring reliability in harsh conditions.

Diode Element Material: SILICON

Being made of silicon, this diode offers high temperature tolerance, good conductivity, and long-term reliability in various operating conditions.

Technical Specifications

Diodes & Rectifiers MBR1045MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

500 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR1045MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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