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MBR1045MFST1G

Onsemi

MBR1045MFST1G by Onsemi

MBR1045MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 10A and a max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a matte tin terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 12,760 parts In-Stock

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Digiode

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.106

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$0.096

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$0.087

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40

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$0.087

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AZTECH Wire

Italy . 457 parts In-Stock

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$10.820

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Perfect Parts

USA . 6,720 parts In-Stock

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Problanco Electronics

Mexico . 5,203 parts In-Stock

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Kulean Microsystems

USA . 3,173 parts In-Stock

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TANS Electronics

Latvia . 2,194 parts In-Stock

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SupplyDigital Components

Austria . 1,943 parts In-Stock

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UHIMA Technologies

Türkiye . 914 parts In-Stock

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Corphita

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Corohmni

South Africa . 264 parts In-Stock

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Overview

Upgrade your electronics with the MBR1045MFST1G by Onsemi, a top-quality rectifier diode designed for efficiency applications. Manufactured using cutting-edge technology and housed in a durable plastic/epoxy package, this diode offers a maximum output current of 10A and a maximum repetitive peak reverse voltage of 45V. With its Schottky technology and matte tin terminal finish, this diode provides reliable performance in a compact, surface-mountable design. Trust Onsemi to deliver superior products that bring value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material ensures durability and protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Current: 500 uA

Low maximum reverse current helps in minimizing power losses and improving efficiency of the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to function reliably even in demanding conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC), making this product ideal for power supply applications.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower forward voltage drops compared to standard diodes, making them suitable for high-frequency and high-efficiency applications.

Technical Specifications

Diodes & Rectifiers MBR1045MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

500 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR1045MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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