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MBR30H100MFST1G

Onsemi

MBR30H100MFST1G by Onsemi

MBR30H100MFST1G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 30A output current, and 0.9V forward voltage. It is used for efficiency applications in temperatures ranging from -55°C to 175°C. The diode has a plastic/epoxy package, matte tin finish, and dual terminals for surface mount assembly.

Median Price

$0.817

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 116 parts In-Stock

1+ parts

$0.664

100+ parts

$0.624

1k+ parts

$0.565

10k+ parts

-

116

$0.664

$0.624

$0.565

-

DigiKey

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.970

4,500

-

-

-

$0.970

Flip Electronics (Authorized)

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,500

-

-

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 812 parts In-Stock

1+ parts

$0.631

100+ parts

-

1k+ parts

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812

$0.631

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.946

100+ parts

-

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10

$0.946

-

-

-

Chip Stock

USA . 55,000 parts In-Stock

1+ parts

-

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55,000

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Flip Electronics

USA . 4,500 parts In-Stock

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-

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4,500

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Vyrian

USA . 2,307 parts In-Stock

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-

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2,307

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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200

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Kiltronic GmbH

Germany . 51 parts In-Stock

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-

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51

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.149

100+ parts

$0.136

1k+ parts

$0.122

10k+ parts

-

350

$0.149

$0.136

$0.122

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Corphita

USA . 330 parts In-Stock

1+ parts

$0.598

100+ parts

-

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330

$0.598

-

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Corohmni

South Africa . 456 parts In-Stock

1+ parts

$0.664

100+ parts

-

1k+ parts

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456

$0.664

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-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.927

100+ parts

-

1k+ parts

$0.890

10k+ parts

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100

$0.927

-

$0.890

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Ampacity Inc.

Singapore . 2,127 parts In-Stock

1+ parts

$1.230

100+ parts

-

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2,127

$1.230

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AZTECH Wire

Italy . 372 parts In-Stock

1+ parts

$21.560

100+ parts

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372

$21.560

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Lixinc

USA . 8,361 parts In-Stock

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8,361

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Kulean Microsystems

USA . 5,606 parts In-Stock

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5,606

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TANS Electronics

Latvia . 4,295 parts In-Stock

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4,295

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Problanco Electronics

Mexico . 3,409 parts In-Stock

1+ parts

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3,409

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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278

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SupplyDigital Components

Austria . 206 parts In-Stock

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206

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iodParts Technologies Inc.

India . 200 parts In-Stock

1+ parts

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100+ parts

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200

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Perfect Parts

USA . 22 parts In-Stock

1+ parts

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22

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Overview

Experience the next level of efficiency with the MBR30H100MFST1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are designed to optimize performance and reliability. This product is perfect for a wide range of applications, offering customers unmatched value and benefits. Say goodbye to inefficiency and hello to superior performance with the MBR30H100MFST1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

The surface mount capability makes installation easy and convenient, especially for compact or crowded PCB designs.

Maximum Reverse Current: 100 uA

Low maximum reverse current ensures efficient operation and helps in reducing power consumption.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment on the PCB, optimizing space utilization.

Maximum Output Current: 30 A

High maximum output current capacity makes this diode suitable for applications requiring robust power handling capability.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making this diode a versatile choice for various electronic circuits.

Technology: SCHOTTKY

Schottky diodes offer lower forward voltage drop and faster switching speed compared to standard diodes, improving efficiency and reducing power losses.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage ensures the diode can withstand voltage spikes and surges, enhancing reliability.

Technical Specifications

Diodes & Rectifiers MBR30H100MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR30H100MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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