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RD0506T-H

Onsemi

RD0506T-H by Onsemi

RD0506T-H by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.05 us and max reverse current of 50 uA. It operates at a max temperature of 150 °C, has a forward voltage of 1.6V, and can handle an output current of 5A. Ideal for applications requiring high-speed switching capabilities in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,592 parts In-Stock

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Digiode

USA . 432 parts In-Stock

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AZTECH Wire

Italy . 560 parts In-Stock

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$14.300

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$14.300

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Component Stockers USA

USA . 690 parts In-Stock

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$99.990

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$99.990

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Kulean Microsystems

USA . 8,010 parts In-Stock

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SupplyDigital Components

Austria . 7,302 parts In-Stock

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Corphita

USA . 2,382 parts In-Stock

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TANS Electronics

Latvia . 1,869 parts In-Stock

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Problanco Electronics

Mexico . 1,418 parts In-Stock

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Corohmni

South Africa . 229 parts In-Stock

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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Overview

Unleash the power of ultra-fast recovery with the RD0506T-H by Onsemi. This top-quality rectifier diode offers unparalleled performance and reliability, thanks to its superior design and advanced technology. Perfect for a wide range of applications, this product delivers maximum efficiency and precision in every use. Trust Onsemi's expertise and innovation to bring you the best in diodes and rectifiers. Elevate your projects with the RD0506T-H and experience the difference it makes in your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good insulation and protection for the diode, making it durable and reliable in various operating conditions.

Maximum Reverse Recovery Time: 0.05 us

The ultra-fast reverse recovery time ensures efficient switching and minimal power loss, making this diode suitable for high-speed applications.

Maximum Reverse Current: 50 uA

The low reverse current minimizes power dissipation and improves overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can function reliably in a wide range of temperatures, making it suitable for various industrial applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high peak reverse voltage rating allows this diode to withstand high voltage environments, making it ideal for use in power supply circuits.

Technical Specifications

Diodes & Rectifiers RD0506T-H attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW NOISE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Trade Compliance

RD0506T-H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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