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RD0506LS-SB

Onsemi

RD0506LS-SB by Onsemi

RD0506LS-SB by Onsemi is a single rectifier diode with a max output current of 5A and a max repetitive peak reverse voltage of 600V. Its plastic/epoxy package body material and flange mount style make it suitable for high-temperature applications up to 150 °C, such as power supply units.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,080 parts In-Stock

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Vyrian

USA . 870 parts In-Stock

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TANS Electronics

Latvia . 8,391 parts In-Stock

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Problanco Electronics

Mexico . 2,956 parts In-Stock

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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Kulean Microsystems

USA . 433 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 98 parts In-Stock

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Overview

Elevate your electronic designs with the RD0506LS-SB diode by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that exceed expectations. The RD0506LS-SB offers unparalleled reliability and efficiency, making it perfect for a wide range of applications. Whether you're looking to enhance power supplies or improve circuit performance, this diode is designed to meet your needs. Trust Onsemi to provide cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the diode, making it long-lasting and resistant to external elements.

Maximum Reverse Recovery Time: 0.05 us

The fast reverse recovery time ensures efficient and quick switching, making this diode suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation in various electronic circuits and systems.

Maximum Operating Temperature: 150 °C

The high operating temperature range enables reliable performance in demanding environments without risking overheating or damage.

Maximum Forward Voltage (VF): 1.6 V

The low forward voltage drop results in minimal power loss and efficient energy conversion, making this diode ideal for power-sensitive applications.

Maximum Output Current: 5 A

The high output current rating allows the diode to handle significant electrical loads, making it suitable for various power supply applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high peak reverse voltage rating provides robust protection against reverse voltage spikes and surges, ensuring the diode's reliability in voltage-sensitive circuits.

Diode Element Material: SILICON

Silicon diode elements offer predictable and stable performance characteristics, making this diode a reliable choice for a wide range of electronic applications.

Technical Specifications

Diodes & Rectifiers RD0506LS-SB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

RD0506LS-SB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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