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RD0504T(TP-FA)

Onsemi

RD0504T(TP-FA) by Onsemi

RD0504T(TP-FA) by Onsemi is a single-config rectifier diode with max VF of 1.5V and output current of 5A. Featuring a fast reverse recovery time of 0.05us, it operates up to 150 °C. Ideal for applications requiring high peak reverse voltage and non-repetitive forward current capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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TANS Electronics

Latvia . 6,053 parts In-Stock

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Problanco Electronics

Mexico . 1,893 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 768 parts In-Stock

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Corohmni

South Africa . 494 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 305 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the RD0504T(TP-FA) rectifier diode. Perfect for a wide range of applications, this diode offers efficient performance and durability. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 400V, this diode ensures smooth operation even in challenging conditions. Trust Onsemi to deliver cutting-edge technology and unmatched value with the RD0504T(TP-FA) diode. Elevate your projects with this high-quality component today!

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration simplifies circuit design and reduces component count, making the product more space-efficient and easier to integrate.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time ensures efficient switching, minimizing power losses and improving overall performance of the diode.

Maximum Operating Temperature: 150 °C

High operating temperature range of up to 150 °C ensures reliability and stability even under demanding conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting alternating current (AC) to direct current (DC) with low forward voltage drop, making them suitable for various applications.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop of 1.5 V ensures minimal power dissipation and heat generation, which contributes to energy efficiency.

Maximum Output Current: 5 A

High output current rating of 5 A allows the diode to handle larger loads and currents, making it versatile for different circuit requirements.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating of 400 V provides protection against reverse polarity and voltage surges, ensuring reliable operation in various applications.

Maximum Non Repetitive Peak Forward Current: 40 A

The high non-repetitive peak forward current rating of 40 A allows the diode to withstand transient overcurrent conditions without damage, increasing reliability and longevity.

Technical Specifications

Diodes & Rectifiers RD0504T(TP-FA) attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Trade Compliance

RD0504T(TP-FA) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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