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RD0506T(TP-FA)

Onsemi

RD0506T(TP-FA) by Onsemi

RD0506T(TP-FA) by Onsemi is a SINGLE rectifier diode with 600V peak reverse voltage, 5A output current, and 0.05us reverse recovery time. Suitable for surface mount applications, it operates up to 150 °C making it ideal for power supply and industrial electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,777 parts In-Stock

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Digiode

USA . 550 parts In-Stock

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550

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Problanco Electronics

Mexico . 6,065 parts In-Stock

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6,065

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Kulean Microsystems

USA . 5,450 parts In-Stock

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TANS Electronics

Latvia . 3,585 parts In-Stock

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3,585

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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SupplyDigital Components

Austria . 710 parts In-Stock

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Corohmni

South Africa . 451 parts In-Stock

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Corphita

USA . 280 parts In-Stock

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Overview

Unleash the power of innovation with the RD0506T(TP-FA) by Onsemi. As a trusted leader in diodes & rectifiers, Onsemi delivers unmatched quality and reliability in every product. The RD0506T(TP-FA) exceeds expectations with its high output current of 5A and maximum repetitive peak reverse voltage of 600V, making it ideal for a wide range of applications. Experience superior performance and efficiency with this rectifier diode, providing customers with unparalleled value and benefits. Trust Onsemi to deliver cutting-edge technology that propels your projects to new heights.

Feature Benefit Bullets

Config: SINGLE

Single diode design simplifies circuitry and is suitable for basic rectification applications.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB mounting, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time ensures efficient switching and helps in reducing power loss in high frequency applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this diode can withstand elevated temperatures without compromising performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product ideal for rectification applications.

Maximum Forward Voltage (VF): 1.6 V

Low forward voltage drop results in minimal power loss and improved efficiency in the circuit.

Maximum Output Current: 5 A

Capable of handling a high output current, making it suitable for applications requiring higher current ratings.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage capability ensures reliable operation and protection against voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 80 A

Can withstand high non-repetitive peak forward currents, providing overcurrent protection during transient events.

Technical Specifications

Diodes & Rectifiers RD0506T(TP-FA) attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Trade Compliance

RD0506T(TP-FA) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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