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RD0506T-TL-H

Onsemi

RD0506T-TL-H by Onsemi

RD0506T-TL-H by Onsemi is a single diode with ultra-fast recovery time of 0.05 us and max reverse current of 50 uA. It operates at up to 150 °C, has a max output current of 5 A, and a max repetitive peak reverse voltage of 600 V. Ideal for applications requiring high-speed rectification in small outline packages.

Median Price

$0.802

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21,265 parts In-Stock

1+ parts

-

100+ parts

$0.773

1k+ parts

$0.642

10k+ parts

$0.572

21,265

-

$0.773

$0.642

$0.572

DigiKey

USA . 21,265 parts In-Stock

1+ parts

-

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$0.970

10k+ parts

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21,265

-

-

$0.970

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Verical

USA . 12,865 parts In-Stock

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-

100+ parts

-

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$0.802

10k+ parts

$0.715

12,865

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-

$0.802

$0.715

Distributors (In-Stock)

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Digiode

USA . 1,420 parts In-Stock

1+ parts

$0.597

100+ parts

-

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1,420

$0.597

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Vyrian

USA . 248 parts In-Stock

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$0.628

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248

$0.628

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Chip Stock

USA . 68,000 parts In-Stock

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68,000

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Distributors (Availability)

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Corphita

USA . 1,963 parts In-Stock

1+ parts

$0.565

100+ parts

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1,963

$0.565

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-

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Corohmni

South Africa . 187 parts In-Stock

1+ parts

$0.628

100+ parts

-

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187

$0.628

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Microchip USA

USA . 7,691 parts In-Stock

1+ parts

$3.900

100+ parts

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7,691

$3.900

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Continental Prestige Electronics

USA . 21,265 parts In-Stock

1+ parts

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100+ parts

$0.504

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21,265

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$0.504

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Kulean Microsystems

USA . 6,148 parts In-Stock

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6,148

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TANS Electronics

Latvia . 4,190 parts In-Stock

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4,190

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Problanco Electronics

Mexico . 3,809 parts In-Stock

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SupplyDigital Components

Austria . 960 parts In-Stock

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960

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UHIMA Technologies

Türkiye . 394 parts In-Stock

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394

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Overview

Discover the cutting-edge RD0506T-TL-H diode by Onsemi, a top-quality manufacturer known for delivering innovative solutions. This rectifier diode boasts ultra-fast recovery time and a maximum repetitive peak reverse voltage of 600V, making it ideal for high-performance applications. With a maximum output current of 5A and a low forward voltage of 1.6V, this diode offers superior efficiency and reliability. Upgrade your projects with the RD0506T-TL-H and experience unmatched performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection for the diode, making it suitable for various environments and applications.

Maximum Reverse Recovery Time: 0.05 us

The ultra-fast reverse recovery time of 0.05 us ensures efficient switching performance and minimal energy loss in the diode.

Maximum Reverse Current: 50 uA

Low reverse current of 50 uA indicates minimal leakage current, enhancing the efficiency of the diode.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand elevated temperatures, ensuring reliable performance in various conditions.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage of 600 V allows the diode to handle high voltage applications with ease.

Technical Specifications

Diodes & Rectifiers RD0506T-TL-H attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW NOISE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Trade Compliance

RD0506T-TL-H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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