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NRVBM110LT1G

Onsemi

NRVBM110LT1G by Onsemi

NRVBM110LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.175V and output current of 1A. It operates b/w -55 °C to 125°C, making it suitable for automotive applications meeting AEC-Q101 standards. The diode has a max repetitive peak reverse voltage of 10V and non-repetitive peak forward current of 50A, housed in a small outline rectangular package for surface mount assembly.

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3

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1k+

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USA . 46,000 parts In-Stock

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USA . 902 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.039

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$0.035

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$0.032

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70

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AZTECH Wire

Italy . 263 parts In-Stock

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$8.640

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Component Stockers USA

USA . 325 parts In-Stock

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$99.990

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

Latvia . 4,584 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,380 parts In-Stock

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UHIMA Technologies

Türkiye . 950 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NRVBM110LT1G diode rectifier. Designed for a wide range of applications, this small outline package offers exceptional performance in a compact form. With a maximum output current of 1A and a low forward voltage of 0.175V, this Schottky diode provides efficient power management. Trust in Onsemi's AEC-Q101 standard compliance and matte tin terminal finish for durable and long-lasting use. Upgrade your electronic designs with the NRVBM110LT1G and enjoy the benefits of precision engineering and advanced technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and insulation, ensuring reliability and durability.

Config: SINGLE

Simplifies circuit design and layout, making it easier to integrate into various applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort.

Package Shape: RECTANGULAR

Facilitates space-saving packaging and mounting on PCBs.

Package Style (Meter): SMALL OUTLINE

Offers compact form factor, ideal for applications with space constraints.

Maximum Operating Temperature: 125 °C

Ensures stable performance even in high-temperature environments.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for versatility in operating conditions.

Terminal Finish: MATTE TIN

Enhances solderability and longevity of the product.

Terminal Position: SINGLE

Simplifies installation and connection in circuits.

Case Connection: CATHODE

Provides easy identification of terminal connections.

Diode Type: RECTIFIER DIODE

Suitable for converting AC to DC, making it versatile for various power applications.

Technology: SCHOTTKY

Offers fast switching speeds and low forward voltage drop, improving efficiency.

Terminal Form: GULL WING

Facilitates automated assembly processes, reducing production costs.

Maximum Repetitive Peak Reverse Voltage: 10 V

Provides sufficient margin of safety for reverse voltage protection.

Maximum Output Current: 1 A

Suitable for low to moderate current applications, making it versatile.

Diode Element Material: SILICON

Offers reliable performance and durability in various environmental conditions.

Technical Specifications

Diodes & Rectifiers NRVBM110LT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.175 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVBM110LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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