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MBR10100MFST3G

Onsemi

MBR10100MFST3G by Onsemi

MBR10100MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high-speed switching and low forward voltage drop. The diode's small outline package with surface mount capability enhances its versatility in electronic circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

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Vyrian

USA . 7,656 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,177 parts In-Stock

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Component Stockers USA

USA . 766 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 7,206 parts In-Stock

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Kulean Microsystems

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GreenTree Electronics

Israel . 4,990 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Corphita

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Overview

Experience superior efficiency and performance with the MBR10100MFST3G by Onsemi. As a leader in diodes & rectifiers, Onsemi delivers top-quality products for a wide range of applications. This Schottky rectifier diode offers a maximum output current of 10A and a maximum forward voltage of 0.95V, ensuring reliable operation even in demanding conditions. With a maximum repetitive peak reverse voltage of 100V, this diode is perfect for high-power applications. Trust Onsemi to provide you with the best-in-class components for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various operating conditions.

Maximum Reverse Current: 100 uA

Ensures minimal leakage current, improving efficiency and reliability of the diode.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, allowing for versatile applications in different environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying alternating current to direct current, making it ideal for power conversion applications.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop leads to higher efficiency and lower power dissipation in the circuit.

Technical Specifications

Diodes & Rectifiers MBR10100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR10100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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