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MT9V022IA7ATC-DP

Onsemi

MT9V022IA7ATC-DP by Onsemi

MT9V022IA7ATC-DP by Onsemi is a 1/3 inch CMOS image sensor with 752x480 pixels. It operates at 26.6 MHz with a dynamic range of 54.4 dB and supports a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in devices such as surveillance cameras and industrial inspection systems.

Median Price

$19.686

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

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$19.686

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Vyrian

USA . 2,743 parts In-Stock

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Digiode

USA . 627 parts In-Stock

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Flip Electronics

USA . 602 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 409 parts In-Stock

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$15.827

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409

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Corohmni

South Africa . 254 parts In-Stock

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$19.292

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Netroflash

USA . 2,000 parts In-Stock

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$19.686

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$18.702

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$18.308

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$19.686

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$18.702

$18.308

Ampacity Inc.

Singapore . 1,148 parts In-Stock

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$22.750

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TANS Electronics

Latvia . 7,221 parts In-Stock

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Perfect Parts

USA . 4,837 parts In-Stock

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SupplyDigital Components

Austria . 4,277 parts In-Stock

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Kulean Microsystems

USA . 3,551 parts In-Stock

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Problanco Electronics

Mexico . 1,589 parts In-Stock

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Corphita

USA . 844 parts In-Stock

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Kepictronics

USA . 780 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Overview

Enhance your imaging projects with the MT9V022IA7ATC-DP by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality image sensors that guarantee high performance and reliability. This image sensor is perfect for a wide range of applications, from industrial automation to security systems. With its advanced features and superior technology, the MT9V022IA7ATC-DP provides exceptional value, offering customers the benefits of precise imaging, fast data processing, and seamless integration. Upgrade your imaging solutions today with this innovative product from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 6X6

Small pixel size allows for high resolution images and better image quality.

Maximum Supply Voltage: 3.6 V

Higher supply voltage allows for better performance and functionality of the image sensor.

Master Clock: 26.6 MHz

Higher master clock frequency enables faster image capture and processing.

Body Width: 9 inch

Compact body width makes it suitable for applications where space is a constraint.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides efficient image capturing and low power consumption.

Package Shape or Style: SQUARE

Square package shape makes it easy to mount and integrate into various devices.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in harsh environments.

Horizontal Pixel: 752

High horizontal pixel count enables detailed image capture and analysis.

Output Range: -9-9mA

Wide output range allows for capturing a wide range of light intensities with good accuracy.

Output Type: DIGITAL CURRENT

Digital current output simplifies data processing and communication with other devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish provides better connectivity and durability.

Maximum Operating Current: 60 mA

Higher maximum operating current allows for better performance output in demanding applications.

Dynamic Range: 54.4 dB

Wide dynamic range allows for capturing both bright and dark areas in an image accurately.

Vertical Pixel: 480

Vertical pixel count adds depth to images and enhances overall image quality.

Body Length/Diameter: 9 mm

Compact body length/diameter makes it easy to integrate into various devices and systems.

Optical Format (inch): 1/3

Optical format of 1/3 is commonly used in image sensor applications and ensures compatibility.

Termination Type: SOLDER

Solder termination provides secure connections and ensures reliability in operation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connection with other devices and systems for data transfer.

Frame Rate: 60 fps

High frame rate allows for capturing fast-moving objects or scenes with clarity and smoothness.

Array Type: FRAME

Frame array type enables efficient image capture and processing for various applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies installation and integration of the image sensor into devices.

Technical Specifications

Image Sensors MT9V022IA7ATC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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